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Ohta, Hiroshi, Horikiri, Fumimasa, Nakamura, Tohru, Mishima, Tomoyoshi (2017) Ion-irradiation damage on GaN p-n junction diodes by inductively coupled plasma etching and its recovery by thermal treatment. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 409. 65-68 doi:10.1016/j.nimb.2017.05.034

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Reference TypeJournal (article/letter/editorial)
TitleIon-irradiation damage on GaN p-n junction diodes by inductively coupled plasma etching and its recovery by thermal treatment
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
AuthorsOhta, HiroshiAuthor
Horikiri, FumimasaAuthor
Nakamura, TohruAuthor
Mishima, TomoyoshiAuthor
Year2017 (October)Volume409
PublisherElsevier BV
DOIdoi:10.1016/j.nimb.2017.05.034Search in ResearchGate
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Mindat Ref. ID5655167Long-form Identifiermindat:1:5:5655167:5
GUID0
Full ReferenceOhta, Hiroshi, Horikiri, Fumimasa, Nakamura, Tohru, Mishima, Tomoyoshi (2017) Ion-irradiation damage on GaN p-n junction diodes by inductively coupled plasma etching and its recovery by thermal treatment. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 409. 65-68 doi:10.1016/j.nimb.2017.05.034
Plain TextOhta, Hiroshi, Horikiri, Fumimasa, Nakamura, Tohru, Mishima, Tomoyoshi (2017) Ion-irradiation damage on GaN p-n junction diodes by inductively coupled plasma etching and its recovery by thermal treatment. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 409. 65-68 doi:10.1016/j.nimb.2017.05.034
In(2017) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 409. Elsevier BV

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Tsuge, Hirofumi, Ikeda, Kiyoji, Kato, Shigeki, Nishimura, Tomoaki, Nakamura, Tohru, Kuriyama, Kazuo, Mishima, Tomoyoshi (2017) Impact of Mg-ion implantation with various fluence ranges on optical properties of n-type GaN. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 409. 50-52 doi:10.1016/j.nimb.2017.07.021
Ohta, Hiroshi, Hayashi, Kentaro, Horikiri, Fumimasa, Yoshino, Michitaka, Nakamura, Tohru, Mishima, Tomoyoshi (2018) 5.0 kV breakdown-voltage vertical GaN p–n junction diodes. Japanese Journal of Applied Physics, 57 (4) 4 doi:10.7567/jjap.57.04fg09
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Nishikata, N., Kushida, K., Nishimura, T., Mishima, T., Kuriyama, K., Nakamura, T. (2017) Evaluation of lattice displacement in Mg – Implanted GaN by Rutherford backscattering spectroscopy. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 409. 302-304 doi:10.1016/j.nimb.2017.03.125
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Xu, Shizhen, Zheng, Wanguo, Yuan, Xiaodong, Lv, Haibin, Zu, Xiaotao (2008) Recovery of fused silica surface damage resistance by ion beam etching. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 266 (15). 3370-3374 doi:10.1016/j.nimb.2008.04.014
 
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