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Yoshimura, Satoru, Sugimoto, Satoshi, Takeuchi, Takae, Murai, Kensuke, Kiuchi, Masato (2018) Injected ion energy dependence of SiC film deposited by low-energy SiC 3 H 9 + ion beam produced from hexamethyldisilane. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 420. 6-11 doi:10.1016/j.nimb.2018.01.031

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Reference TypeJournal (article/letter/editorial)
TitleInjected ion energy dependence of SiC film deposited by low-energy SiC 3 H 9 + ion beam produced from hexamethyldisilane
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
AuthorsYoshimura, SatoruAuthor
Sugimoto, SatoshiAuthor
Takeuchi, TakaeAuthor
Murai, KensukeAuthor
Kiuchi, MasatoAuthor
Year2018 (April)Volume420
PublisherElsevier BV
DOIdoi:10.1016/j.nimb.2018.01.031Search in ResearchGate
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Mindat Ref. ID5655672Long-form Identifiermindat:1:5:5655672:2
GUID0
Full ReferenceYoshimura, Satoru, Sugimoto, Satoshi, Takeuchi, Takae, Murai, Kensuke, Kiuchi, Masato (2018) Injected ion energy dependence of SiC film deposited by low-energy SiC 3 H 9 + ion beam produced from hexamethyldisilane. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 420. 6-11 doi:10.1016/j.nimb.2018.01.031
Plain TextYoshimura, Satoru, Sugimoto, Satoshi, Takeuchi, Takae, Murai, Kensuke, Kiuchi, Masato (2018) Injected ion energy dependence of SiC film deposited by low-energy SiC 3 H 9 + ion beam produced from hexamethyldisilane. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 420. 6-11 doi:10.1016/j.nimb.2018.01.031
In(2018) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 420. Elsevier BV

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Yoshimura, Satoru, Sugimoto, Satoshi, Takeuchi, Takae, Murai, Kensuke, Kiuchi, Masato (2019) Characteristics of films deposited by the irradiation of GeCHx+ ions produced from hexamethyldigermane and their dependence on the injected ion energy. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 461. 1-5 doi:10.1016/j.nimb.2019.09.014
Yoshimura, Satoru, Sugimoto, Satoshi, Takeuchi, Takae, Murai, Kensuke, Kiuchi, Masato (2021) Production of low-energy SiCH3+ and SiC2H7+ ion beams for 3C-SiC film formation by selecting fragment ions from dimethylsilane. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 487. 85-89 doi:10.1016/j.nimb.2020.12.001
Yoshimura, Satoru, Sugimoto, Satoshi, Takeuchi, Takae, Murai, Kensuke, Kiuchi, Masato (2018) Identification of fragment ions produced from hexamethyldisilazane and production of low-energy mass-selected fragment ion beam. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 430. 1-5 doi:10.1016/j.nimb.2018.05.040
Yoshimura, Satoru, Sugimoto, Satoshi, Takeuchi, Takae, Murai, Kensuke, Kiuchi, Masato (2022) Low-energy O+ ion beam induced chemical vapor deposition using tetraethyl orthosilicate for silicon dioxide film formation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 511. 113-117 doi:10.1016/j.nimb.2021.11.022
Yoshimura, Satoru, Sugimoto, Satoshi, Takeuchi, Takae, Murai, Kensuke, Kiuchi, Masato (2022) Low-energy Ar+ ion beam induced chemical vapor deposition of silicon carbide films using dimethylsilane. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 527. 40-44 doi:10.1016/j.nimb.2022.07.016
Yoshimura, Satoru, Sugimoto, Satoshi, Takeuchi, Takae, Kiuchi, Masato (2020) Production of low-energy fragment-ion beams from hexamethyldisiloxane and the irradiation of SiO+ ion beam to substrates with supplemental oxygen gas for SiO2 film formation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 479. 13-17 doi:10.1016/j.nimb.2020.06.019
Yoshimura, Satoru, Takeuchi, Takae, Kiuchi, Masato (2024) Low-energy O+ or SiO+ ion beam induced deposition of silicon oxide using hexamethyldisiloxane. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 549. 165276 doi:10.1016/j.nimb.2024.165276
Yoshimura, Satoru, Sugimoto, Satoshi, Kiuchi, Masato (2016) Low-energy mass-selected ion beam production of fragments produced from hexamethyldisilane for SiC film formation. Journal of Applied Physics, 119 (10). 103302pp. doi:10.1063/1.4943497
Yoshimura, Satoru, Sugimoto, Satoshi, Takeuchi, Takae, Murai, Kensuke, Kiuchi, Masato (2023) Deposition of germanium dioxide films by the injection of oxygen ion beam in conjunction with hexamethyldigermane. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1056. 168707 doi:10.1016/j.nima.2023.168707
Matsutani, Takaomi, Kiuchi, Masato, Takeuchi, Takae (2007) Preparation of Ge–C films by low-energy ion beam induced chemical vapor deposition with hexamethyldigermane. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 257 (1). 261-264 doi:10.1016/j.nimb.2007.01.018
Kiuchi, Masato, Takeuchi, Takae, Yamamoto, Masao (1997) The charge effects in the low-energy ion depositing processes. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 121 (1). 154-156 doi:10.1016/s0168-583x(96)00379-5
 
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