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Clark, M G (1975) Electronic structure of the activating layer in III-V:Cs-O negative-electron-affinity photoemitters. Journal of Physics D: Applied Physics, 8. 535-542 doi:10.1088/0022-3727/8/5/013

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Reference TypeJournal (article/letter/editorial)
TitleElectronic structure of the activating layer in III-V:Cs-O negative-electron-affinity photoemitters
JournalJournal of Physics D: Applied Physics
AuthorsClark, M GAuthor
Year1975 (April 1)Volume8
PublisherIOP Publishing
DOIdoi:10.1088/0022-3727/8/5/013Search in ResearchGate
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Mindat Ref. ID5659465Long-form Identifiermindat:1:5:5659465:2
GUID0
Full ReferenceClark, M G (1975) Electronic structure of the activating layer in III-V:Cs-O negative-electron-affinity photoemitters. Journal of Physics D: Applied Physics, 8. 535-542 doi:10.1088/0022-3727/8/5/013
Plain TextClark, M G (1975) Electronic structure of the activating layer in III-V:Cs-O negative-electron-affinity photoemitters. Journal of Physics D: Applied Physics, 8. 535-542 doi:10.1088/0022-3727/8/5/013
In(1975) Journal of Physics D: Applied Physics Vol. 8. IOP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Burt, M G, Inkson, J C (1975) Emission of X electrons from (110) GaAs activated to negative electron affinity. Journal of Physics D: Applied Physics, 8. doi:10.1088/0022-3727/8/1/002
Burt, M G, Inkson, J C (1976) A study of emission from the (1,1,1) faces of GaAs negative electron affinity photoemitters. Journal of Physics D: Applied Physics, 9. 43-53 doi:10.1088/0022-3727/9/1/011
Bell, R L (1975) Selection rules for negative affinity emission. Journal of Physics D: Applied Physics, 8. doi:10.1088/0022-3727/8/9/003
Burt, M G (1977) Electron emission from Si(100) negative electron affinity surfaces. Journal of Physics D: Applied Physics, 10. 1161-1166 doi:10.1088/0022-3727/10/8/015
Burt, M G, Inkson, J C (1977) The face dependence of the emission of electrons from GaAs activated to negative electron affinity. Journal of Physics D: Applied Physics, 10. 721-727 doi:10.1088/0022-3727/10/5/013
Lantto, V (1975) A study of electron transmission at 10-30 keV. Journal of Physics D: Applied Physics, 8. 1341-1352 doi:10.1088/0022-3727/8/11/013
Nashed, M (1975) Electron-microwave interactions. Journal of Physics D: Applied Physics, 8. 595-608 doi:10.1088/0022-3727/8/6/003
Burt, M G (1978) A comment on photoemission from negative-electron-affinity GaAsP with a direct or an indirect band-gap. Journal of Physics D: Applied Physics, 11. 1189-1193 doi:10.1088/0022-3727/11/8/010
Allen, G A (1971) The performance of negative electron affinity photocathodes. Journal of Physics D: Applied Physics, 4. 308-317 doi:10.1088/0022-3727/4/2/317
Lowell, J (1975) Contact electrification of metals. Journal of Physics D: Applied Physics, 8. 53-63 doi:10.1088/0022-3727/8/1/013
Cook, N, Burtt, R B (1975) Kinetic electron ejection by scattered neutralized positive ions. Journal of Physics D: Applied Physics, 8. 812-819 doi:10.1088/0022-3727/8/7/013
 
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