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Burt, M G, Inkson, J C (1977) The face dependence of the emission of electrons from GaAs activated to negative electron affinity. Journal of Physics D: Applied Physics, 10. 721-727 doi:10.1088/0022-3727/10/5/013

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Reference TypeJournal (article/letter/editorial)
TitleThe face dependence of the emission of electrons from GaAs activated to negative electron affinity
JournalJournal of Physics D: Applied Physics
AuthorsBurt, M GAuthor
Inkson, J CAuthor
Year1977 (April 1)Volume10
PublisherIOP Publishing
DOIdoi:10.1088/0022-3727/10/5/013Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5660108Long-form Identifiermindat:1:5:5660108:6
GUID0
Full ReferenceBurt, M G, Inkson, J C (1977) The face dependence of the emission of electrons from GaAs activated to negative electron affinity. Journal of Physics D: Applied Physics, 10. 721-727 doi:10.1088/0022-3727/10/5/013
Plain TextBurt, M G, Inkson, J C (1977) The face dependence of the emission of electrons from GaAs activated to negative electron affinity. Journal of Physics D: Applied Physics, 10. 721-727 doi:10.1088/0022-3727/10/5/013
In(1977) Journal of Physics D: Applied Physics Vol. 10. IOP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Burt, M G, Inkson, J C (1975) Emission of X electrons from (110) GaAs activated to negative electron affinity. Journal of Physics D: Applied Physics, 8. doi:10.1088/0022-3727/8/1/002
Burt, M G, Inkson, J C (1976) Emission from the (1,1,0) face of negative-electron affinity gallium arsenide. Journal of Physics D: Applied Physics, 9. doi:10.1088/0022-3727/9/1/002
Burt, M G, Inkson, J C (1976) A study of emission from the (1,1,1) faces of GaAs negative electron affinity photoemitters. Journal of Physics D: Applied Physics, 9. 43-53 doi:10.1088/0022-3727/9/1/011
Burt, M G (1977) Electron emission from Si(100) negative electron affinity surfaces. Journal of Physics D: Applied Physics, 10. 1161-1166 doi:10.1088/0022-3727/10/8/015
Bradley, D J, Allenson, M B, Holeman, B R (1977) The transverse energy of electrons emitted from GaAs photocathodes. Journal of Physics D: Applied Physics, 10. 111-125 doi:10.1088/0022-3727/10/1/013
Reimer, L, Drescher, H (1977) Secondary electron emission of 10-100 keV electrons from transparent films of Al and Au. Journal of Physics D: Applied Physics, 10. 805-815 doi:10.1088/0022-3727/10/5/022
Clark, M G (1975) Electronic structure of the activating layer in III-V:Cs-O negative-electron-affinity photoemitters. Journal of Physics D: Applied Physics, 8. 535-542 doi:10.1088/0022-3727/8/5/013
Burt, M G (1978) A comment on photoemission from negative-electron-affinity GaAsP with a direct or an indirect band-gap. Journal of Physics D: Applied Physics, 11. 1189-1193 doi:10.1088/0022-3727/11/8/010
Liljequist, D (1977) A simple analysis of the transmission and backscattering of 10-30 keV electrons in solid layers. Journal of Physics D: Applied Physics, 10. 1363-1377 doi:10.1088/0022-3727/10/10/013
Ling, Y S, Thumwood, R F (1977) Measurement of the statistics of transmission secondary emission from negative-electron-affinity silicon. Journal of Physics E: Scientific Instruments, 10 (5). 535-537 doi:10.1088/0022-3735/10/5/033
Williams, M M R (1977) On the energy transfer to electrons by fast atoms. Journal of Physics D: Applied Physics, 10. 851-861 doi:10.1088/0022-3727/10/6/007
 
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