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Radouane, K, Date, L, Yousfi, M, Despax, B, Caquineau, H (2000) RF discharge modelling in a N2O/SiH4mixture for SiO2deposition and comparison with experiment. Journal of Physics D: Applied Physics, 33. 1332-1341 doi:10.1088/0022-3727/33/11/312

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Reference TypeJournal (article/letter/editorial)
TitleRF discharge modelling in a N2O/SiH4mixture for SiO2deposition and comparison with experiment
JournalJournal of Physics D: Applied Physics
AuthorsRadouane, KAuthor
Date, LAuthor
Yousfi, MAuthor
Despax, BAuthor
Caquineau, HAuthor
Year2000 (June 7)Volume33
PublisherIOP Publishing
DOIdoi:10.1088/0022-3727/33/11/312Search in ResearchGate
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Mindat Ref. ID5667953Long-form Identifiermindat:1:5:5667953:7
GUID0
Full ReferenceRadouane, K, Date, L, Yousfi, M, Despax, B, Caquineau, H (2000) RF discharge modelling in a N2O/SiH4mixture for SiO2deposition and comparison with experiment. Journal of Physics D: Applied Physics, 33. 1332-1341 doi:10.1088/0022-3727/33/11/312
Plain TextRadouane, K, Date, L, Yousfi, M, Despax, B, Caquineau, H (2000) RF discharge modelling in a N2O/SiH4mixture for SiO2deposition and comparison with experiment. Journal of Physics D: Applied Physics, 33. 1332-1341 doi:10.1088/0022-3727/33/11/312
In(2000) Journal of Physics D: Applied Physics Vol. 33. IOP Publishing


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