Reference Type | Journal (article/letter/editorial) |
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Title | RF discharge modelling in a N2O/SiH4mixture for SiO2deposition and comparison with experiment |
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Journal | Journal of Physics D: Applied Physics |
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Authors | Radouane, K | Author |
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Date, L | Author |
Yousfi, M | Author |
Despax, B | Author |
Caquineau, H | Author |
Year | 2000 (June 7) | Volume | 33 |
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Publisher | IOP Publishing |
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DOI | doi:10.1088/0022-3727/33/11/312Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 5667953 | Long-form Identifier | mindat:1:5:5667953:7 |
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GUID | 0 |
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Full Reference | Radouane, K, Date, L, Yousfi, M, Despax, B, Caquineau, H (2000) RF discharge modelling in a N2O/SiH4mixture for SiO2deposition and comparison with experiment. Journal of Physics D: Applied Physics, 33. 1332-1341 doi:10.1088/0022-3727/33/11/312 |
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Plain Text | Radouane, K, Date, L, Yousfi, M, Despax, B, Caquineau, H (2000) RF discharge modelling in a N2O/SiH4mixture for SiO2deposition and comparison with experiment. Journal of Physics D: Applied Physics, 33. 1332-1341 doi:10.1088/0022-3727/33/11/312 |
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In | (2000) Journal of Physics D: Applied Physics Vol. 33. IOP Publishing |
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