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Feng, P X, Riley, J D, Leckey, R C G, Pigram, P J, Seyller, T, Ley, L (2001) Surface, interface and bulk properties of GaAs(111)B treated by Se layers. Journal of Physics D: Applied Physics, 34. 678-682 doi:10.1088/0022-3727/34/5/303

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Reference TypeJournal (article/letter/editorial)
TitleSurface, interface and bulk properties of GaAs(111)B treated by Se layers
JournalJournal of Physics D: Applied Physics
AuthorsFeng, P XAuthor
Riley, J DAuthor
Leckey, R C GAuthor
Pigram, P JAuthor
Seyller, TAuthor
Ley, LAuthor
Year2001 (March 7)Volume34
PublisherIOP Publishing
DOIdoi:10.1088/0022-3727/34/5/303Search in ResearchGate
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Mindat Ref. ID5668881Long-form Identifiermindat:1:5:5668881:8
GUID0
Full ReferenceFeng, P X, Riley, J D, Leckey, R C G, Pigram, P J, Seyller, T, Ley, L (2001) Surface, interface and bulk properties of GaAs(111)B treated by Se layers. Journal of Physics D: Applied Physics, 34. 678-682 doi:10.1088/0022-3727/34/5/303
Plain TextFeng, P X, Riley, J D, Leckey, R C G, Pigram, P J, Seyller, T, Ley, L (2001) Surface, interface and bulk properties of GaAs(111)B treated by Se layers. Journal of Physics D: Applied Physics, 34. 678-682 doi:10.1088/0022-3727/34/5/303
In(2000) Journal of Physics D: Applied Physics Vol. 34. IOP Publishing

See Also

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Feng, P X, Riley, J D, Leckey, R C G, Ley, L (2001) MBE growth of MgSe thin films on ZnSe/GaAs(001) substrates. Journal of Physics D: Applied Physics, 34. 1293-1300 doi:10.1088/0022-3727/34/9/303
Feng, P. X., Leckey, R. C. G., Riley, J. D., Brack, N., Pigram, P. J., Hollering, M., Ley, L. (2001) Photoemission studies of ZnSe epilayers grown on GaAs(111)B surface. Journal of Applied Physics, 89 (1). 710-717 doi:10.1063/1.1327606
Feng, P X, Riley, J D, Leckey, R C G (2004) Photoemission Studies of Surface, Interface and Bulk Properties of GaAs (001) Treated by Mg. Physica Scripta, 69 (1). 69-73 doi:10.1238/physica.regular.069a00069
Feng, P.X., Riley, J.D., Leckey, R.C.G., Pigram, P.J., Hollering, M., Ley, L. (2000) Surface and bulk properties of GaAs(001) treated by selenium layers. Surface Science, 468 (1). 109-121 doi:10.1016/s0039-6028(00)00797-4
Moran, M, Meidia, H, Fleischmann, T, Norris, D J, Rees, G J, Cullis, A G, Hopkinson, M (2001) Indium segregation in (111)B GaAs-InxGa1-xAs quantum wells determined by transmission electron microscopy. Journal of Physics D: Applied Physics, 34. 1943-1946 doi:10.1088/0022-3727/34/13/302
Riley, D P, O'Connor, D J, Dastoor, P, Brack, N, Pigram, P J (2002) Comparative analysis of Ti3SiC2 and associated compounds using x-ray diffraction and x-ray photoelectron spectroscopy. Journal of Physics D: Applied Physics, 35. 1603-1611 doi:10.1088/0022-3727/35/13/324
Mackay, K, Papakonstantinou, P, Dodd, P M, Atkinson, R, Pollard, R J (2001) Microstructure, magnetic and nanomechanical properties of FeTaN films prepared by co-sputtering. Journal of Physics D: Applied Physics, 34. 41-47 doi:10.1088/0022-3727/34/1/308
Galiy, P V, Nenchuk, T M, Stakhira, J M (2001) Study of interface formation on the cleavage surfaces ofA3{B}6layered semiconductors. Journal of Physics D: Applied Physics, 34. 18-24 doi:10.1088/0022-3727/34/1/304
Urbieta, A, Fernández, P, Piqueras, J, Hardalov, Ch, Sekiguchi, T (2001) Cathodoluminescence microscopy of hydrothermal and flux grown ZnO single crystals. Journal of Physics D: Applied Physics, 34. 2945-2949 doi:10.1088/0022-3727/34/19/303
Zhang, X. D., Riley, J. D., Leckey, R. C. G., Ley, L. (1993) Conduction-band structure of GaAs as determined by angle-resolved photoemission. Physical Review B, 48 (23) 17077-17085 doi:10.1103/physrevb.48.17077
Tanner, B K, Parbrook, P J, Whitehouse, C R, Keir, A M, Johnson, A D, Jones, J, Wallis, D, Smith, L M, Lunn, B, Hogg, J H C (2001) In situx-ray topography measurement of the growth temperature dependence of the critical thickness of epitaxial InGaAs on GaAs. Journal of Physics D: Applied Physics, 34. doi:10.1088/0022-3727/34/10a/322
 
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