| Reference Type | Journal (article/letter/editorial) |
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| Title | The influence ofin situphotoexcitation on a defect structure generation in Ar implanted GaAs(001) crystals revealed by high-resolution x-ray diffraction and Rutherford backscattering spectroscopy |
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| Journal | Journal of Physics D: Applied Physics |
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| Authors | Chtcherbatchev, K D | Author |
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| Bublik, V T | Author |
| Markevich, A S | Author |
| Mordkovich, V N | Author |
| Alves, E | Author |
| Barradas, N P | Author |
| Sequeira, A D | Author |
| Year | 2003 (May 21) | Volume | 36 |
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| Publisher | IOP Publishing |
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| DOI | doi:10.1088/0022-3727/36/10a/329Search in ResearchGate |
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| Generate Citation Formats |
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| Mindat Ref. ID | 5669563 | Long-form Identifier | mindat:1:5:5669563:2 |
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|
| GUID | 0 |
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| Full Reference | Chtcherbatchev, K D, Bublik, V T, Markevich, A S, Mordkovich, V N, Alves, E, Barradas, N P, Sequeira, A D (2003) The influence ofin situphotoexcitation on a defect structure generation in Ar implanted GaAs(001) crystals revealed by high-resolution x-ray diffraction and Rutherford backscattering spectroscopy. Journal of Physics D: Applied Physics, 36. doi:10.1088/0022-3727/36/10a/329 |
|---|
| Plain Text | Chtcherbatchev, K D, Bublik, V T, Markevich, A S, Mordkovich, V N, Alves, E, Barradas, N P, Sequeira, A D (2003) The influence ofin situphotoexcitation on a defect structure generation in Ar implanted GaAs(001) crystals revealed by high-resolution x-ray diffraction and Rutherford backscattering spectroscopy. Journal of Physics D: Applied Physics, 36. doi:10.1088/0022-3727/36/10a/329 |
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| In | (2002) Journal of Physics D: Applied Physics Vol. 36. IOP Publishing |
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