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Kyutt, R N, Shubina, T V, Sorokin, S V, Solnyshkov, D D, Ivanov, S V, Willander, M (2003) X-ray diffraction determination of the interface structure of CdSe/BeTe superlattices. Journal of Physics D: Applied Physics, 36. doi:10.1088/0022-3727/36/10a/334

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Reference TypeJournal (article/letter/editorial)
TitleX-ray diffraction determination of the interface structure of CdSe/BeTe superlattices
JournalJournal of Physics D: Applied Physics
AuthorsKyutt, R NAuthor
Shubina, T VAuthor
Sorokin, S VAuthor
Solnyshkov, D DAuthor
Ivanov, S VAuthor
Willander, MAuthor
Year2003 (May 21)Volume36
PublisherIOP Publishing
DOIdoi:10.1088/0022-3727/36/10a/334Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5669568Long-form Identifiermindat:1:5:5669568:7
GUID0
Full ReferenceKyutt, R N, Shubina, T V, Sorokin, S V, Solnyshkov, D D, Ivanov, S V, Willander, M (2003) X-ray diffraction determination of the interface structure of CdSe/BeTe superlattices. Journal of Physics D: Applied Physics, 36. doi:10.1088/0022-3727/36/10a/334
Plain TextKyutt, R N, Shubina, T V, Sorokin, S V, Solnyshkov, D D, Ivanov, S V, Willander, M (2003) X-ray diffraction determination of the interface structure of CdSe/BeTe superlattices. Journal of Physics D: Applied Physics, 36. doi:10.1088/0022-3727/36/10a/334
In(2002) Journal of Physics D: Applied Physics Vol. 36. IOP Publishing

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Kyutt, R. N., Toropov, A. A., Sorokin, S. V., Shubina, T. V., Ivanov, S. V., Karlsteen, M., Willander, M. (1999) Broadening of submonolayer CdSe sheets in CdSe/ZnSe superlattices studied by x-ray diffraction. Applied Physics Letters, 75 (3). 373-375 doi:10.1063/1.124379
Ivanov, S. V., Toropov, A. A., Shubina, T. V., Sorokin, S. V., Kyutt, R. N., Sitnikova, A. A., Solnyshkov, D. D., Nekrutkina, O. V. (2004) CdSe-based nanostructures: growth, properties, lasers. physica status solidi (b), 241 (3). 531-537 doi:10.1002/pssb.200304263
Hayashi, S, Bruno, D, Sandhu, R, Goorsky, M S (2003) X-ray scattering techniques for assessment of III V wafer bonding. Journal of Physics D: Applied Physics, 36. doi:10.1088/0022-3727/36/10a/349
Kyutt, R N, Shulpina, I L, Mosina, G N, Ratnikov, V V, Sorokin, L M, Scheglov, M P, Ruvimov, S S, Kearns, J, Todt, V (2005) X-ray diffraction study of defect distribution in Czochralski grown silicon highly doped by As. Journal of Physics D: Applied Physics, 38. doi:10.1088/0022-3727/38/10a/021
Ratnikov, V V, Kyutt, R N, Shubina, T V, Paskova, T, Monemar, B (2001) Determination of microdistortion components and their application to structural characterization of HVPE GaN epitaxial layers. Journal of Physics D: Applied Physics, 34. doi:10.1088/0022-3727/34/10a/307
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