| Reference Type | Journal (article/letter/editorial) |
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| Title | X-ray scattering techniques for assessment of III V wafer bonding |
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| Journal | Journal of Physics D: Applied Physics |
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| Authors | Hayashi, S | Author |
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| Bruno, D | Author |
| Sandhu, R | Author |
| Goorsky, M S | Author |
| Year | 2003 (May 21) | Volume | 36 |
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| Publisher | IOP Publishing |
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| DOI | doi:10.1088/0022-3727/36/10a/349Search in ResearchGate |
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| Generate Citation Formats |
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| Mindat Ref. ID | 5669583 | Long-form Identifier | mindat:1:5:5669583:6 |
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|
| GUID | 0 |
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| Full Reference | Hayashi, S, Bruno, D, Sandhu, R, Goorsky, M S (2003) X-ray scattering techniques for assessment of III V wafer bonding. Journal of Physics D: Applied Physics, 36. doi:10.1088/0022-3727/36/10a/349 |
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| Plain Text | Hayashi, S, Bruno, D, Sandhu, R, Goorsky, M S (2003) X-ray scattering techniques for assessment of III V wafer bonding. Journal of Physics D: Applied Physics, 36. doi:10.1088/0022-3727/36/10a/349 |
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| In | (2002) Journal of Physics D: Applied Physics Vol. 36. IOP Publishing |
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