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Miclaus, C, Goorsky, M S (2003) Strain evolution in hydrogen-implanted silicon. Journal of Physics D: Applied Physics, 36. doi:10.1088/0022-3727/36/10a/336

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Reference TypeJournal (article/letter/editorial)
TitleStrain evolution in hydrogen-implanted silicon
JournalJournal of Physics D: Applied Physics
AuthorsMiclaus, CAuthor
Goorsky, M SAuthor
Year2003 (May 21)Volume36
PublisherIOP Publishing
DOIdoi:10.1088/0022-3727/36/10a/336Search in ResearchGate
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Mindat Ref. ID5669570Long-form Identifiermindat:1:5:5669570:2
GUID0
Full ReferenceMiclaus, C, Goorsky, M S (2003) Strain evolution in hydrogen-implanted silicon. Journal of Physics D: Applied Physics, 36. doi:10.1088/0022-3727/36/10a/336
Plain TextMiclaus, C, Goorsky, M S (2003) Strain evolution in hydrogen-implanted silicon. Journal of Physics D: Applied Physics, 36. doi:10.1088/0022-3727/36/10a/336
In(2002) Journal of Physics D: Applied Physics Vol. 36. IOP Publishing

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