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Dornstetter, Jean-Christophe, Wang, Junkang, Bruneau, Bastien, Johnson, Erik V., Roca i Cabarrocas, Pere (2014) Material and growth mechanism studies of microcrystalline silicon deposited from SiF4/H2/Ar gas mixtures. Canadian Journal of Physics, 92. 740-743 doi:10.1139/cjp-2013-0606

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Reference TypeJournal (article/letter/editorial)
TitleMaterial and growth mechanism studies of microcrystalline silicon deposited from SiF4/H2/Ar gas mixtures
JournalCanadian Journal of Physics
AuthorsDornstetter, Jean-ChristopheAuthor
Wang, JunkangAuthor
Bruneau, BastienAuthor
Johnson, Erik V.Author
Roca i Cabarrocas, PereAuthor
Year2014 (July)Volume92
PublisherCanadian Science Publishing
DOIdoi:10.1139/cjp-2013-0606Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5996795Long-form Identifiermindat:1:5:5996795:6
GUID0
Full ReferenceDornstetter, Jean-Christophe, Wang, Junkang, Bruneau, Bastien, Johnson, Erik V., Roca i Cabarrocas, Pere (2014) Material and growth mechanism studies of microcrystalline silicon deposited from SiF4/H2/Ar gas mixtures. Canadian Journal of Physics, 92. 740-743 doi:10.1139/cjp-2013-0606
Plain TextDornstetter, Jean-Christophe, Wang, Junkang, Bruneau, Bastien, Johnson, Erik V., Roca i Cabarrocas, Pere (2014) Material and growth mechanism studies of microcrystalline silicon deposited from SiF4/H2/Ar gas mixtures. Canadian Journal of Physics, 92. 740-743 doi:10.1139/cjp-2013-0606
In(n.d.) Canadian Journal of Physics Vol. 92. Canadian Science Publishing

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Dornstetter, Jean-Christophe, Bruneau, Bastien, Bulkin, Pavel, Johnson, Erik V., Roca i Cabarrocas, Pere (2014) Understanding the amorphous-to-microcrystalline silicon transition in SiF4/H2/Ar gas mixtures. The Journal of Chemical Physics, 140 (23). 234706pp. doi:10.1063/1.4883503
Bruneau, B., Wang, J., Dornstetter, J.-C., Johnson, E. V. (2014) Growth mechanisms study of microcrystalline silicon deposited by SiH4/H2 plasma using tailored voltage waveforms. Journal of Applied Physics, 115 (8). 84901pp. doi:10.1063/1.4866693
Johnson, Erik V., Patriarche, Gilles, Roca i Cabarrocas, Pere (2008) Directional growth of Ge on GaAs at 175°C using plasma-generated nanocrystals. Applied Physics Letters, 92 (10). 103108pp. doi:10.1063/1.2895636
Wang, Junkang, Bulkin, Pavel, Florea, Ileana, Maurice, Jean-Luc, Johnson, Erik (2016) Microcrystalline silicon thin films deposited by matrix-distributed electron cyclotron resonance plasma enhanced chemical vapor deposition using an SiF4 /H2chemistry. Journal of Physics D: Applied Physics, 49. 285203pp. doi:10.1088/0022-3727/49/28/285203
Michard, S., Meier, M., Zastrow, U., Astakhov, O., Finger, F. (2014) Investigation of porosity and atmospheric gas diffusion in microcrystalline silicon fabricated at high growth rates. Canadian Journal of Physics, 92. 774-777 doi:10.1139/cjp-2013-0636
Reynolds, Steve, Michard, Stephan, Wang, Shuo, Smirnov, Vladimir (2014) Electronic properties of undoped microcrystalline silicon oxide films. Canadian Journal of Physics, 92. 753-757 doi:10.1139/cjp-2013-0618
Watrin, Lise, Silva, François, Jadaud, Cyril, Bulkin, Pavel, Vanel, Jean-Charles, Muller, Dominique, Johnson, Erik V, Ouaras, Karim, Roca I Cabarrocas, Pere (2024) Direct growth of highly oriented GaN thin films on silicon by remote plasma CVD. Journal of Physics D: Applied Physics, 57 (31) 315106 doi:10.1088/1361-6463/ad436c
Haddad, Farah, Goyal, Prabal, Johnson, Erik V., Hong, Junegie, Roca i Cabarrocas, Pere, Maurice, Jean-Luc (2016) Quasi-fivefold symmetric electron diffraction patterns due to multiple twinning in silicon thin films grown from hexamethyldisiloxane. Journal of Applied Crystallography, 49 (6). 2226-2234 doi:10.1107/s1600576716016848
Kim, Ka-Hyun, Johnson, Erik V., Roca i Cabarrocas, Pere (2016) Light-induced changes in silicon nanocrystal based solar cells: Modification of silicon–hydrogen bonding on silicon nanocrystal surface under illumination. Japanese Journal of Applied Physics, 55 (7) 72302 doi:10.7567/jjap.55.072302
Kim, Ka-Hyun, Ibrahim, Bicher Haj, Johnson, Erik V, Martino, Antonello De, Cabarrocas, Pere Roca i (2013) Real-time transmission Mueller polarimetry on hydrogenated polymorphous silicon under current injection. Journal of Physics D: Applied Physics, 46. 45304pp. doi:10.1088/0022-3727/46/4/045304
Kasouit, S., Kumar, S., Vanderhaghen, R., Roca i Cabarrocas, P., French, I. (2002) Fluorine and hydrogen effects on the growth and transport properties of microcrystalline silicon from SiF4 precursor. Journal of Non-Crystalline Solids, 299. 113-117 doi:10.1016/s0022-3093(01)01187-5
 
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