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Reynolds, Steve, Michard, Stephan, Wang, Shuo, Smirnov, Vladimir (2014) Electronic properties of undoped microcrystalline silicon oxide films. Canadian Journal of Physics, 92. 753-757 doi:10.1139/cjp-2013-0618

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Reference TypeJournal (article/letter/editorial)
TitleElectronic properties of undoped microcrystalline silicon oxide films
JournalCanadian Journal of Physics
AuthorsReynolds, SteveAuthor
Michard, StephanAuthor
Wang, ShuoAuthor
Smirnov, VladimirAuthor
Year2014 (July)Volume92
PublisherCanadian Science Publishing
DOIdoi:10.1139/cjp-2013-0618Search in ResearchGate
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Mindat Ref. ID5996806Long-form Identifiermindat:1:5:5996806:1
GUID0
Full ReferenceReynolds, Steve, Michard, Stephan, Wang, Shuo, Smirnov, Vladimir (2014) Electronic properties of undoped microcrystalline silicon oxide films. Canadian Journal of Physics, 92. 753-757 doi:10.1139/cjp-2013-0618
Plain TextReynolds, Steve, Michard, Stephan, Wang, Shuo, Smirnov, Vladimir (2014) Electronic properties of undoped microcrystalline silicon oxide films. Canadian Journal of Physics, 92. 753-757 doi:10.1139/cjp-2013-0618
In(n.d.) Canadian Journal of Physics Vol. 92. Canadian Science Publishing

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Michard, S., Meier, M., Zastrow, U., Astakhov, O., Finger, F. (2014) Investigation of porosity and atmospheric gas diffusion in microcrystalline silicon fabricated at high growth rates. Canadian Journal of Physics, 92. 774-777 doi:10.1139/cjp-2013-0636
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