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Hong-Bin, Pu, Lin, Cao, Zhi-Ming, Chen, Jie, Ren, Ya-Gong, Nan (2010) Modeling of 4H—SiC multi-floating-junction Schottky barrier diode. Chinese Physics B, 19. 107101pp. doi:10.1088/1674-1056/19/10/107101

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Reference TypeJournal (article/letter/editorial)
TitleModeling of 4H—SiC multi-floating-junction Schottky barrier diode
JournalChinese Physics B
AuthorsHong-Bin, PuAuthor
Lin, CaoAuthor
Zhi-Ming, ChenAuthor
Jie, RenAuthor
Ya-Gong, NanAuthor
Year2010 (October)Volume19
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/19/10/107101Search in ResearchGate
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Mindat Ref. ID5999743Long-form Identifiermindat:1:5:5999743:4
GUID0
Full ReferenceHong-Bin, Pu, Lin, Cao, Zhi-Ming, Chen, Jie, Ren, Ya-Gong, Nan (2010) Modeling of 4H—SiC multi-floating-junction Schottky barrier diode. Chinese Physics B, 19. 107101pp. doi:10.1088/1674-1056/19/10/107101
Plain TextHong-Bin, Pu, Lin, Cao, Zhi-Ming, Chen, Jie, Ren, Ya-Gong, Nan (2010) Modeling of 4H—SiC multi-floating-junction Schottky barrier diode. Chinese Physics B, 19. 107101pp. doi:10.1088/1674-1056/19/10/107101
In(n.d.) Chinese Physics B Vol. 19. IOP Publishing

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Ya-Gong, Nan, Hong-Bin, Pu, Lin, Cao, Jie, Ren (2010) Study and optimal simulation of 4H—SiC floating junction Schottky barrier diodes' structures and electric properties. Chinese Physics B, 19. 107304pp. doi:10.1088/1674-1056/19/10/107304
Cao, Lin, Pu, Hong-Bin, Chen, Zhi-Ming, Zang, Yuan (2012) Analysis and simulation of a 4H-SiC semi-superjunction Schottky barrier diode for softer reverse-recovery. Chinese Physics B, 21. 17303pp. doi:10.1088/1674-1056/21/1/017303
Feng-Ping, Chen, Yu-Ming, Zhang, Hong-Liang, Lü, Yi-Men, Zhang, Jian-Hua, Huang (2010) Study of 4H-SiC junction barrier Schottky diode using field guard ring termination. Chinese Physics B, 19. 97107pp. doi:10.1088/1674-1056/19/9/097107
Pu, Hong-Bin, Cao, Lin, Chen, Zhi-Ming, Ren, Jie (2011) Optically controlled SiCGe/SiC heterojunction transistor with charge-compensation layer. Chinese Physics B, 20. 57304pp. doi:10.1088/1674-1056/20/5/057304
Li, Shi-Bin, Yu, Hong-Ping, Zhang, Ting, Chen, Zhi, Wu, Zhi-Ming (2014) Low-resistance Ohmic contact on polarization-doped AlGaN/GaN heterojunction. Chinese Physics B, 23. 107101pp. doi:10.1088/1674-1056/23/10/107101
Pu, Hong-Bin, He, Xin, Quan, Ru-Dai, Cao, Lin, Chen, Zhi-Ming (2013) Simulation of near-infrared photodiode detectors based on β-FeSi2/4H-SiC heterojunctions. Chinese Physics B, 22. 37301pp. doi:10.1088/1674-1056/22/3/037301
Shou-Guo, Wang, Yan, Zhang, Yi-Men, Zhang, Yu-Ming, Zhang (2010) Characterization of ion-implanted 4H-SiC Schottky barrier diodes. Chinese Physics B, 19. 17203-5 doi:10.1088/1674-1056/19/1/017203
Yue-Hu, Wang, Yi-Men, Zhang, Yu-Ming, Zhang, Lin, Zhang, Ren-Xu, Jia, Da, Chen (2010) SiC epitaxial layers grown by chemical vapour deposition and the fabrication of Schottky barrier diodes. Chinese Physics B, 19. 36803pp. doi:10.1088/1674-1056/19/3/036803
Qing-Wen, Song, Yu-Ming, Zhang, Yi-Men, Zhang, Qian, Zhang, Hong-Liang, Lü (2010) Study of a double epi-layers SiC junction barrier Schottky rectifiers embedded P layer in the drift region. Chinese Physics B, 19. 87202pp. doi:10.1088/1674-1056/19/8/087202
Chen, Feng-Ping, Zhang, Yu-Ming, Zhang, Yi-Men, Tang, Xiao-Yan, Wang, Yue-Hu, Chen, Wen-Hao (2011) Edge termination study and fabrication of a 4H-SiC junction barrier Schottky diode. Chinese Physics B, 20. 117301pp. doi:10.1088/1674-1056/20/11/117301
Feng-Ping, Chen, Yu-Ming, Zhang, Yi-Men, Zhang, Hong-Liang, Lü, Qing-Wen, Song (2010) Simulation research on offset field-plate used as edge termination in 4H–SiC merged PiN-Schottky diodes. Chinese Physics B, 19. 47305pp. doi:10.1088/1674-1056/19/4/047305
 
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