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Qing-Wen, Song, Yu-Ming, Zhang, Yi-Men, Zhang, Qian, Zhang, Hong-Liang, Lü (2010) Study of a double epi-layers SiC junction barrier Schottky rectifiers embedded P layer in the drift region. Chinese Physics B, 19. 87202pp. doi:10.1088/1674-1056/19/8/087202

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Reference TypeJournal (article/letter/editorial)
TitleStudy of a double epi-layers SiC junction barrier Schottky rectifiers embedded P layer in the drift region
JournalChinese Physics B
AuthorsQing-Wen, SongAuthor
Yu-Ming, ZhangAuthor
Yi-Men, ZhangAuthor
Qian, ZhangAuthor
Hong-Liang, LüAuthor
Year2010 (August)Volume19
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/19/8/087202Search in ResearchGate
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Mindat Ref. ID6000609Long-form Identifiermindat:1:5:6000609:3
GUID0
Full ReferenceQing-Wen, Song, Yu-Ming, Zhang, Yi-Men, Zhang, Qian, Zhang, Hong-Liang, Lü (2010) Study of a double epi-layers SiC junction barrier Schottky rectifiers embedded P layer in the drift region. Chinese Physics B, 19. 87202pp. doi:10.1088/1674-1056/19/8/087202
Plain TextQing-Wen, Song, Yu-Ming, Zhang, Yi-Men, Zhang, Qian, Zhang, Hong-Liang, Lü (2010) Study of a double epi-layers SiC junction barrier Schottky rectifiers embedded P layer in the drift region. Chinese Physics B, 19. 87202pp. doi:10.1088/1674-1056/19/8/087202
In(n.d.) Chinese Physics B Vol. 19. IOP Publishing

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Qing-Wen, Song, Yu-Ming, Zhang, Yi-Men, Zhang, Qian, Zhang, Hui, Guo, Zhi-Yun, Li, Zhong-Xu, Wang (2010) Influence of geometrical parameters on the behaviour of SiC merged PiN Schottky rectifiers with junction termination extension. Chinese Physics B, 19. 47201pp. doi:10.1088/1674-1056/19/4/047201
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Zhang, Qian, Zhang, Yu-Ming, Yuan, Lei, Zhang, Yi-Men, Tang, Xiao-Yan, Song, Qing-Wen (2012) Fabrication and characterization of 4H—SiC bipolar junction transistor with double base epilayer. Chinese Physics B, 21. 88502pp. doi:10.1088/1674-1056/21/8/088502
Wang, Yue-Hu, Zhang, Yi-Men, Zhang, Yu-Ming, Song, Qing-Wen, Jia, Ren-Xu (2011) Al/Ti/4H-SiC Schottky barrier diodes with inhomogeneous barrier heights. Chinese Physics B, 20. 87305pp. doi:10.1088/1674-1056/20/8/087305
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