Watch the Dallas Symposium LIVE, and fundraiser auction
Ticket proceeds support mindat.org! - click here...
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Xiao-Yan, Tang, Yu-Ming, Zhang, Yi-Men, Zhang (2010) Study of a 4H–SiC epitaxial n-channel MOSFET. Chinese Physics B, 19. 47204pp. doi:10.1088/1674-1056/19/4/047204

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleStudy of a 4H–SiC epitaxial n-channel MOSFET
JournalChinese Physics B
AuthorsXiao-Yan, TangAuthor
Yu-Ming, ZhangAuthor
Yi-Men, ZhangAuthor
Year2010 (April)Volume19
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/19/4/047204Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6000227Long-form Identifiermindat:1:5:6000227:3
GUID0
Full ReferenceXiao-Yan, Tang, Yu-Ming, Zhang, Yi-Men, Zhang (2010) Study of a 4H–SiC epitaxial n-channel MOSFET. Chinese Physics B, 19. 47204pp. doi:10.1088/1674-1056/19/4/047204
Plain TextXiao-Yan, Tang, Yu-Ming, Zhang, Yi-Men, Zhang (2010) Study of a 4H–SiC epitaxial n-channel MOSFET. Chinese Physics B, 19. 47204pp. doi:10.1088/1674-1056/19/4/047204
In(n.d.) Chinese Physics B Vol. 19. IOP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Rui-Xia, Miao, Yu-Ming, Zhang, Yi-Men, Zhang, Xiao-Yan, Tang, Qing-Feng, Gai (2010) Investigation of dislocations in 8° off-axis 4H-SiC epilayer. Chinese Physics B, 19. 76106pp. doi:10.1088/1674-1056/19/7/076106
Shou-Guo, Wang, Yan, Zhang, Yi-Men, Zhang, Yu-Ming, Zhang (2010) Characterization of ion-implanted 4H-SiC Schottky barrier diodes. Chinese Physics B, 19. 17203-5 doi:10.1088/1674-1056/19/1/017203
Shou-Guo, Wang, Yan, Zhang, Yi-Men, Zhang, Yu-Ming, Zhang (2010) Ohmic contacts of 4H-SiC on ion-implantation layers. Chinese Physics B, 19. 17204-5 doi:10.1088/1674-1056/19/1/017204
Ping, Cheng, Yu-Ming, Zhang, Yi-Men, Zhang, Hui, Guo (2010) Relationship of annealing time and intrinsic defects of unintentionally doped 4H-SiC. Chinese Physics B, 19. 97802pp. doi:10.1088/1674-1056/19/9/097802
Liu, Si-Cheng, Tang, Xiao-Yan, Song, Qing-Wen, Yuan, Hao, Zhang, Yi-Meng, Zhang, Yi-Men, Zhang, Yu-Ming (2021) Lateral depletion-mode 4H-SiC n-channel junction field-effect transistors operational at 400 °C*. Chinese Physics B, 30 (2) 28503pp. doi:10.1088/1674-1056/abc0df
Ren-Xu, Jia, Yu-Ming, Zhang, Yi-Men, Zhang (2010) First-principle calculation on the defect energy level of carbon vacancy in 4H—SiC. Chinese Physics B, 19. 107105pp. doi:10.1088/1674-1056/19/10/107105
Feng-Ping, Chen, Yu-Ming, Zhang, Hong-Liang, Lü, Yi-Men, Zhang, Jian-Hua, Huang (2010) Study of 4H-SiC junction barrier Schottky diode using field guard ring termination. Chinese Physics B, 19. 97107pp. doi:10.1088/1674-1056/19/9/097107
Han, Chao, Zhang, Yu-Ming, Song, Qing-Wen, Tang, Xiao-Yan, Zhang, Yi-Men, Guo, Hui, Wang, Yue-Hu (2015) Low specific contact resistance on epitaxial p-type 4H-SiC with a step-bunching surface. Chinese Physics B, 24. 117304pp. doi:10.1088/1674-1056/24/11/117304
Yuan, Hao, Song, Qing-Wen, Han, Chao, Tang, Xiao-Yan, He, Xiao-Ning, Zhang, Yu-Ming, Zhang, Yi-Men (2019) Hysteresis effect in current–voltage characteristics of Ni/n-type 4H-SiC Schottky structure. Chinese Physics B, 28. 117303pp. doi:10.1088/1674-1056/ab470f
Chen, Feng-Ping, Zhang, Yu-Ming, Zhang, Yi-Men, Tang, Xiao-Yan, Wang, Yue-Hu, Chen, Wen-Hao (2011) Edge termination study and fabrication of a 4H-SiC junction barrier Schottky diode. Chinese Physics B, 20. 117301pp. doi:10.1088/1674-1056/20/11/117301
Chen, Feng-Ping, Zhang, Yu-Ming, Zhang, Yi-Men, Tang, Xiao-Yan, Wang, Yue-Hu, Chen, Wen-Hao (2012) Temperature-dependent characteristics of 4H—SiC junction barrier Schottky diodes. Chinese Physics B, 21. 37304pp. doi:10.1088/1674-1056/21/3/037304
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: August 21, 2025 06:15:51
Go to top of page