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Ping, Cheng, Yu-Ming, Zhang, Yi-Men, Zhang, Hui, Guo (2010) Relationship of annealing time and intrinsic defects of unintentionally doped 4H-SiC. Chinese Physics B, 19. 97802pp. doi:10.1088/1674-1056/19/9/097802

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Reference TypeJournal (article/letter/editorial)
TitleRelationship of annealing time and intrinsic defects of unintentionally doped 4H-SiC
JournalChinese Physics B
AuthorsPing, ChengAuthor
Yu-Ming, ZhangAuthor
Yi-Men, ZhangAuthor
Hui, GuoAuthor
Year2010 (September)Volume19
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/19/9/097802Search in ResearchGate
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Mindat Ref. ID6000727Long-form Identifiermindat:1:5:6000727:8
GUID0
Full ReferencePing, Cheng, Yu-Ming, Zhang, Yi-Men, Zhang, Hui, Guo (2010) Relationship of annealing time and intrinsic defects of unintentionally doped 4H-SiC. Chinese Physics B, 19. 97802pp. doi:10.1088/1674-1056/19/9/097802
Plain TextPing, Cheng, Yu-Ming, Zhang, Yi-Men, Zhang, Hui, Guo (2010) Relationship of annealing time and intrinsic defects of unintentionally doped 4H-SiC. Chinese Physics B, 19. 97802pp. doi:10.1088/1674-1056/19/9/097802
In(n.d.) Chinese Physics B Vol. 19. IOP Publishing

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