Shou-Guo, Wang, Yi-Men, Zhang, Yu-Ming, Zhang (2010) Parameter analysis for gate metal-oxide-semiconductor structures of ion-implanted 4H silicon carbide metal-semiconductor field-effect transistors. Chinese Physics B, 19. 97106pp. doi:10.1088/1674-1056/19/9/097106
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Parameter analysis for gate metal-oxide-semiconductor structures of ion-implanted 4H silicon carbide metal-semiconductor field-effect transistors | ||
| Journal | Chinese Physics B | ||
| Authors | Shou-Guo, Wang | Author | |
| Yi-Men, Zhang | Author | ||
| Yu-Ming, Zhang | Author | ||
| Year | 2010 (September) | Volume | 19 |
| Publisher | IOP Publishing | ||
| DOI | doi:10.1088/1674-1056/19/9/097106Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 6000710 | Long-form Identifier | mindat:1:5:6000710:8 |
| GUID | 0 | ||
| Full Reference | Shou-Guo, Wang, Yi-Men, Zhang, Yu-Ming, Zhang (2010) Parameter analysis for gate metal-oxide-semiconductor structures of ion-implanted 4H silicon carbide metal-semiconductor field-effect transistors. Chinese Physics B, 19. 97106pp. doi:10.1088/1674-1056/19/9/097106 | ||
| Plain Text | Shou-Guo, Wang, Yi-Men, Zhang, Yu-Ming, Zhang (2010) Parameter analysis for gate metal-oxide-semiconductor structures of ion-implanted 4H silicon carbide metal-semiconductor field-effect transistors. Chinese Physics B, 19. 97106pp. doi:10.1088/1674-1056/19/9/097106 | ||
| In | (n.d.) Chinese Physics B Vol. 19. IOP Publishing | ||
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