Zhang, Xian-Jun, Yang, Yin-Tang, Duan, Bao-Xing, Chai, Chang-Chun, Song, Kun, Chen, Bin (2012) Drain-induced barrier lowering effect for short channel dual material gate 4H silicon carbide metal—semiconductor field-effect transistor. Chinese Physics B, 21. 97302pp. doi:10.1088/1674-1056/21/9/097302
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Drain-induced barrier lowering effect for short channel dual material gate 4H silicon carbide metal—semiconductor field-effect transistor | ||
| Journal | Chinese Physics B | ||
| Authors | Zhang, Xian-Jun | Author | |
| Yang, Yin-Tang | Author | ||
| Duan, Bao-Xing | Author | ||
| Chai, Chang-Chun | Author | ||
| Song, Kun | Author | ||
| Chen, Bin | Author | ||
| Year | 2012 (September) | Volume | 21 |
| Publisher | IOP Publishing | ||
| DOI | doi:10.1088/1674-1056/21/9/097302Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 6002906 | Long-form Identifier | mindat:1:5:6002906:7 |
| GUID | 0 | ||
| Full Reference | Zhang, Xian-Jun, Yang, Yin-Tang, Duan, Bao-Xing, Chai, Chang-Chun, Song, Kun, Chen, Bin (2012) Drain-induced barrier lowering effect for short channel dual material gate 4H silicon carbide metal—semiconductor field-effect transistor. Chinese Physics B, 21. 97302pp. doi:10.1088/1674-1056/21/9/097302 | ||
| Plain Text | Zhang, Xian-Jun, Yang, Yin-Tang, Duan, Bao-Xing, Chai, Chang-Chun, Song, Kun, Chen, Bin (2012) Drain-induced barrier lowering effect for short channel dual material gate 4H silicon carbide metal—semiconductor field-effect transistor. Chinese Physics B, 21. 97302pp. doi:10.1088/1674-1056/21/9/097302 | ||
| In | (n.d.) Chinese Physics B Vol. 21. IOP Publishing | ||
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