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Rui-Xia, Miao, Yu-Ming, Zhang, Yi-Men, Zhang, Xiao-Yan, Tang, Qing-Feng, Gai (2010) Investigation of dislocations in 8° off-axis 4H-SiC epilayer. Chinese Physics B, 19. 76106pp. doi:10.1088/1674-1056/19/7/076106

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Reference TypeJournal (article/letter/editorial)
TitleInvestigation of dislocations in 8° off-axis 4H-SiC epilayer
JournalChinese Physics B
AuthorsRui-Xia, MiaoAuthor
Yu-Ming, ZhangAuthor
Yi-Men, ZhangAuthor
Xiao-Yan, TangAuthor
Qing-Feng, GaiAuthor
Year2010 (July)Volume19
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/19/7/076106Search in ResearchGate
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Mindat Ref. ID6000498Long-form Identifiermindat:1:5:6000498:9
GUID0
Full ReferenceRui-Xia, Miao, Yu-Ming, Zhang, Yi-Men, Zhang, Xiao-Yan, Tang, Qing-Feng, Gai (2010) Investigation of dislocations in 8° off-axis 4H-SiC epilayer. Chinese Physics B, 19. 76106pp. doi:10.1088/1674-1056/19/7/076106
Plain TextRui-Xia, Miao, Yu-Ming, Zhang, Yi-Men, Zhang, Xiao-Yan, Tang, Qing-Feng, Gai (2010) Investigation of dislocations in 8° off-axis 4H-SiC epilayer. Chinese Physics B, 19. 76106pp. doi:10.1088/1674-1056/19/7/076106
In(n.d.) Chinese Physics B Vol. 19. IOP Publishing

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Xiao-Yan, Tang, Yu-Ming, Zhang, Yi-Men, Zhang (2010) Study of a 4H–SiC epitaxial n-channel MOSFET. Chinese Physics B, 19. 47204pp. doi:10.1088/1674-1056/19/4/047204
Zhang, Qian, Zhang, Yu-Ming, Yuan, Lei, Zhang, Yi-Men, Tang, Xiao-Yan, Song, Qing-Wen (2012) Fabrication and characterization of 4H—SiC bipolar junction transistor with double base epilayer. Chinese Physics B, 21. 88502pp. doi:10.1088/1674-1056/21/8/088502
Shou-Guo, Wang, Yan, Zhang, Yi-Men, Zhang, Yu-Ming, Zhang (2010) Characterization of ion-implanted 4H-SiC Schottky barrier diodes. Chinese Physics B, 19. 17203-5 doi:10.1088/1674-1056/19/1/017203
Shou-Guo, Wang, Yan, Zhang, Yi-Men, Zhang, Yu-Ming, Zhang (2010) Ohmic contacts of 4H-SiC on ion-implantation layers. Chinese Physics B, 19. 17204-5 doi:10.1088/1674-1056/19/1/017204
Song, Qing-Wen, Zhang, Yu-Ming, Zhang, Yi-Men, Chen, Feng-Ping, Tang, Xiao-Yan (2011) Investigation of current transport parameters of Ti/4H-SiC MPS diode with inhomogeneous barrier. Chinese Physics B, 20. 57301pp. doi:10.1088/1674-1056/20/5/057301
Feng-Ping, Chen, Yu-Ming, Zhang, Yi-Men, Zhang, Hong-Liang, Lü, Qing-Wen, Song (2010) Simulation research on offset field-plate used as edge termination in 4H–SiC merged PiN-Schottky diodes. Chinese Physics B, 19. 47305pp. doi:10.1088/1674-1056/19/4/047305
Ren-Xu, Jia, Yu-Ming, Zhang, Yi-Men, Zhang (2010) First-principle calculation on the defect energy level of carbon vacancy in 4H—SiC. Chinese Physics B, 19. 107105pp. doi:10.1088/1674-1056/19/10/107105
Ping, Cheng, Yu-Ming, Zhang, Yi-Men, Zhang, Hui, Guo (2010) Relationship of annealing time and intrinsic defects of unintentionally doped 4H-SiC. Chinese Physics B, 19. 97802pp. doi:10.1088/1674-1056/19/9/097802
Yuan, Lei, Zhang, Yu-Ming, Song, Qing-Wen, Tang, Xiao-Yan, Zhang, Yi-Men (2015) Non-ideal effect in 4H–SiC bipolar junction transistor with double Gaussian-doped base. Chinese Physics B, 24. 68502pp. doi:10.1088/1674-1056/24/6/068502
Feng-Ping, Chen, Yu-Ming, Zhang, Hong-Liang, Lü, Yi-Men, Zhang, Jian-Hua, Huang (2010) Study of 4H-SiC junction barrier Schottky diode using field guard ring termination. Chinese Physics B, 19. 97107pp. doi:10.1088/1674-1056/19/9/097107
Yuan, Hao, Song, Qing-Wen, Han, Chao, Tang, Xiao-Yan, He, Xiao-Ning, Zhang, Yu-Ming, Zhang, Yi-Men (2019) Hysteresis effect in current–voltage characteristics of Ni/n-type 4H-SiC Schottky structure. Chinese Physics B, 28. 117303pp. doi:10.1088/1674-1056/ab470f
 
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