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Yuan, Lei, Zhang, Yu-Ming, Song, Qing-Wen, Tang, Xiao-Yan, Zhang, Yi-Men (2015) Non-ideal effect in 4H–SiC bipolar junction transistor with double Gaussian-doped base. Chinese Physics B, 24. 68502pp. doi:10.1088/1674-1056/24/6/068502

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Reference TypeJournal (article/letter/editorial)
TitleNon-ideal effect in 4H–SiC bipolar junction transistor with double Gaussian-doped base
JournalChinese Physics B
AuthorsYuan, LeiAuthor
Zhang, Yu-MingAuthor
Song, Qing-WenAuthor
Tang, Xiao-YanAuthor
Zhang, Yi-MenAuthor
Year2015 (June)Volume24
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/24/6/068502Search in ResearchGate
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Mindat Ref. ID6006311Long-form Identifiermindat:1:5:6006311:3
GUID0
Full ReferenceYuan, Lei, Zhang, Yu-Ming, Song, Qing-Wen, Tang, Xiao-Yan, Zhang, Yi-Men (2015) Non-ideal effect in 4H–SiC bipolar junction transistor with double Gaussian-doped base. Chinese Physics B, 24. 68502pp. doi:10.1088/1674-1056/24/6/068502
Plain TextYuan, Lei, Zhang, Yu-Ming, Song, Qing-Wen, Tang, Xiao-Yan, Zhang, Yi-Men (2015) Non-ideal effect in 4H–SiC bipolar junction transistor with double Gaussian-doped base. Chinese Physics B, 24. 68502pp. doi:10.1088/1674-1056/24/6/068502
In(n.d.) Chinese Physics B Vol. 24. IOP Publishing

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Zhang, Qian, Zhang, Yu-Ming, Yuan, Lei, Zhang, Yi-Men, Tang, Xiao-Yan, Song, Qing-Wen (2012) Fabrication and characterization of 4H—SiC bipolar junction transistor with double base epilayer. Chinese Physics B, 21. 88502pp. doi:10.1088/1674-1056/21/8/088502
Liu, Si-Cheng, Tang, Xiao-Yan, Song, Qing-Wen, Yuan, Hao, Zhang, Yi-Meng, Zhang, Yi-Men, Zhang, Yu-Ming (2021) Lateral depletion-mode 4H-SiC n-channel junction field-effect transistors operational at 400 °C*. Chinese Physics B, 30 (2) 28503pp. doi:10.1088/1674-1056/abc0df
Han, Chao, Zhang, Yu-Ming, Song, Qing-Wen, Tang, Xiao-Yan, Zhang, Yi-Men, Guo, Hui, Wang, Yue-Hu (2015) Low specific contact resistance on epitaxial p-type 4H-SiC with a step-bunching surface. Chinese Physics B, 24. 117304pp. doi:10.1088/1674-1056/24/11/117304
Yuan, Hao, Song, Qing-Wen, Han, Chao, Tang, Xiao-Yan, He, Xiao-Ning, Zhang, Yu-Ming, Zhang, Yi-Men (2019) Hysteresis effect in current–voltage characteristics of Ni/n-type 4H-SiC Schottky structure. Chinese Physics B, 28. 117303pp. doi:10.1088/1674-1056/ab470f
Yuan, Hao, Tang, Xiao-Yan, Zhang, Yi-Men, Zhang, Yu-Ming, Song, Qing-Wen, Yang, Fei, Wu, Hao (2014) 4H-SiC Schottky barrier diodes with semi-insulating polycrystalline silicon field plate termination. Chinese Physics B, 23. 57102pp. doi:10.1088/1674-1056/23/5/057102
Song, Qing-Wen, Zhang, Yu-Ming, Zhang, Yi-Men, Chen, Feng-Ping, Tang, Xiao-Yan (2011) Investigation of current transport parameters of Ti/4H-SiC MPS diode with inhomogeneous barrier. Chinese Physics B, 20. 57301pp. doi:10.1088/1674-1056/20/5/057301
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Sun, Qiu-Jie, Zhang, Yu-Ming, Song, Qing-Wen, Tang, Xiao-Yan, Zhang, Yi-Meng, Li, Cheng-Zhan, Zhao, Yan-Li, Zhang, Yi-Men (2017) Near-interface oxide traps in 4H–SiC MOS structures fabricated with and without annealing in NO. Chinese Physics B, 26. 127701pp. doi:10.1088/1674-1056/26/12/127701
Chen, Feng-Ping, Zhang, Yu-Ming, Zhang, Yi-Men, Tang, Xiao-Yan, Wang, Yue-Hu, Chen, Wen-Hao (2012) Temperature-dependent characteristics of 4H—SiC junction barrier Schottky diodes. Chinese Physics B, 21. 37304pp. doi:10.1088/1674-1056/21/3/037304
Tang, Guan Nan, Tang, Xiao Yan, Song, Qing Wen, Zhang, Yi Meng, Zhang, Yi Men, Zhang, Yu Ming (2018) Investigation of 4H-SiC Extraction-Enhanced Vertical Insulated-Gate Bipolar Transistor with Lightly Doped Extractor in Collector Region. Materials Science Forum, 924. 645-648 doi:10.4028/www.scientific.net/msf.924.645
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