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Song, Qing-Wen, Zhang, Yu-Ming, Zhang, Yi-Men, Chen, Feng-Ping, Tang, Xiao-Yan (2011) Investigation of current transport parameters of Ti/4H-SiC MPS diode with inhomogeneous barrier. Chinese Physics B, 20. 57301pp. doi:10.1088/1674-1056/20/5/057301

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Reference TypeJournal (article/letter/editorial)
TitleInvestigation of current transport parameters of Ti/4H-SiC MPS diode with inhomogeneous barrier
JournalChinese Physics B
AuthorsSong, Qing-WenAuthor
Zhang, Yu-MingAuthor
Zhang, Yi-MenAuthor
Chen, Feng-PingAuthor
Tang, Xiao-YanAuthor
Year2011 (May)Volume20
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/20/5/057301Search in ResearchGate
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Mindat Ref. ID6001430Long-form Identifiermindat:1:5:6001430:2
GUID0
Full ReferenceSong, Qing-Wen, Zhang, Yu-Ming, Zhang, Yi-Men, Chen, Feng-Ping, Tang, Xiao-Yan (2011) Investigation of current transport parameters of Ti/4H-SiC MPS diode with inhomogeneous barrier. Chinese Physics B, 20. 57301pp. doi:10.1088/1674-1056/20/5/057301
Plain TextSong, Qing-Wen, Zhang, Yu-Ming, Zhang, Yi-Men, Chen, Feng-Ping, Tang, Xiao-Yan (2011) Investigation of current transport parameters of Ti/4H-SiC MPS diode with inhomogeneous barrier. Chinese Physics B, 20. 57301pp. doi:10.1088/1674-1056/20/5/057301
In(n.d.) Chinese Physics B Vol. 20. IOP Publishing

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Chen, Feng-Ping, Zhang, Yu-Ming, Zhang, Yi-Men, Tang, Xiao-Yan, Wang, Yue-Hu, Chen, Wen-Hao (2011) Edge termination study and fabrication of a 4H-SiC junction barrier Schottky diode. Chinese Physics B, 20. 117301pp. doi:10.1088/1674-1056/20/11/117301
Wang, Yue-Hu, Zhang, Yi-Men, Zhang, Yu-Ming, Song, Qing-Wen, Jia, Ren-Xu (2011) Al/Ti/4H-SiC Schottky barrier diodes with inhomogeneous barrier heights. Chinese Physics B, 20. 87305pp. doi:10.1088/1674-1056/20/8/087305
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Chen, Feng-Ping, Zhang, Yu-Ming, Zhang, Yi-Men, Tang, Xiao-Yan, Wang, Yue-Hu, Chen, Wen-Hao (2012) Temperature-dependent characteristics of 4H—SiC junction barrier Schottky diodes. Chinese Physics B, 21. 37304pp. doi:10.1088/1674-1056/21/3/037304
Qing-Wen, Song, Yu-Ming, Zhang, Yi-Men, Zhang, Hong-Liang, Lü, Feng-Ping, Chen, Qing-Li, Zheng (2009) Analytical model for reverse characteristics of 4H–SiC merged PN–Schottky (MPS) diodes. Chinese Physics B, 18. 5474-5478 doi:10.1088/1674-1056/18/12/057
Yuan, Hao, Tang, Xiao-Yan, Zhang, Yi-Men, Zhang, Yu-Ming, Song, Qing-Wen, Yang, Fei, Wu, Hao (2014) 4H-SiC Schottky barrier diodes with semi-insulating polycrystalline silicon field plate termination. Chinese Physics B, 23. 57102pp. doi:10.1088/1674-1056/23/5/057102
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Rui-Xia, Miao, Yu-Ming, Zhang, Yi-Men, Zhang, Xiao-Yan, Tang, Qing-Feng, Gai (2010) Investigation of dislocations in 8° off-axis 4H-SiC epilayer. Chinese Physics B, 19. 76106pp. doi:10.1088/1674-1056/19/7/076106
Yuan, Lei, Zhang, Yu-Ming, Song, Qing-Wen, Tang, Xiao-Yan, Zhang, Yi-Men (2015) Non-ideal effect in 4H–SiC bipolar junction transistor with double Gaussian-doped base. Chinese Physics B, 24. 68502pp. doi:10.1088/1674-1056/24/6/068502
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