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Jian-Ning, Ding, Jun-Xiong, Wang, Ning-Yi, Yuan, Biao, Kan, Xiao-Shuang, Chen (2010) Electronic band transformation from indirect gap to direct gap in Si–H compound. Chinese Physics B, 19. 77103pp. doi:10.1088/1674-1056/19/7/077103

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Reference TypeJournal (article/letter/editorial)
TitleElectronic band transformation from indirect gap to direct gap in Si–H compound
JournalChinese Physics B
AuthorsJian-Ning, DingAuthor
Jun-Xiong, WangAuthor
Ning-Yi, YuanAuthor
Biao, KanAuthor
Xiao-Shuang, ChenAuthor
Year2010 (July)Volume19
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/19/7/077103Search in ResearchGate
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Mindat Ref. ID6000508Long-form Identifiermindat:1:5:6000508:5
GUID0
Full ReferenceJian-Ning, Ding, Jun-Xiong, Wang, Ning-Yi, Yuan, Biao, Kan, Xiao-Shuang, Chen (2010) Electronic band transformation from indirect gap to direct gap in Si–H compound. Chinese Physics B, 19. 77103pp. doi:10.1088/1674-1056/19/7/077103
Plain TextJian-Ning, Ding, Jun-Xiong, Wang, Ning-Yi, Yuan, Biao, Kan, Xiao-Shuang, Chen (2010) Electronic band transformation from indirect gap to direct gap in Si–H compound. Chinese Physics B, 19. 77103pp. doi:10.1088/1674-1056/19/7/077103
In(n.d.) Chinese Physics B Vol. 19. IOP Publishing

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