Reference Type | Journal (article/letter/editorial) |
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Title | Two-dimensional analytical models for asymmetric fully depleted double-gate strained silicon MOSFETs |
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Journal | Chinese Physics B |
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Authors | Liu, Hong-Xia | Author |
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Li, Jin | Author |
Li, Bin | Author |
Cao, Lei | Author |
Yuan, Bo | Author |
Year | 2011 (January) | Volume | 20 |
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Publisher | IOP Publishing |
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DOI | doi:10.1088/1674-1056/20/1/017301Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 6000825 | Long-form Identifier | mindat:1:5:6000825:9 |
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GUID | 0 |
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Full Reference | Liu, Hong-Xia, Li, Jin, Li, Bin, Cao, Lei, Yuan, Bo (2011) Two-dimensional analytical models for asymmetric fully depleted double-gate strained silicon MOSFETs. Chinese Physics B, 20. 17301pp. doi:10.1088/1674-1056/20/1/017301 |
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Plain Text | Liu, Hong-Xia, Li, Jin, Li, Bin, Cao, Lei, Yuan, Bo (2011) Two-dimensional analytical models for asymmetric fully depleted double-gate strained silicon MOSFETs. Chinese Physics B, 20. 17301pp. doi:10.1088/1674-1056/20/1/017301 |
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In | (n.d.) Chinese Physics B Vol. 20. IOP Publishing |
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