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Li, Cong, Zhuang, Yi-Qi, Zhang, Li, Jin, Gang (2014) A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding-gate MOSFETs. Chinese Physics B, 23. 38502pp. doi:10.1088/1674-1056/23/3/038502

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Reference TypeJournal (article/letter/editorial)
TitleA two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding-gate MOSFETs
JournalChinese Physics B
AuthorsLi, CongAuthor
Zhuang, Yi-QiAuthor
Zhang, LiAuthor
Jin, GangAuthor
Year2014 (March)Volume23
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/23/3/038502Search in ResearchGate
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Mindat Ref. ID6004789Long-form Identifiermindat:1:5:6004789:6
GUID0
Full ReferenceLi, Cong, Zhuang, Yi-Qi, Zhang, Li, Jin, Gang (2014) A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding-gate MOSFETs. Chinese Physics B, 23. 38502pp. doi:10.1088/1674-1056/23/3/038502
Plain TextLi, Cong, Zhuang, Yi-Qi, Zhang, Li, Jin, Gang (2014) A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding-gate MOSFETs. Chinese Physics B, 23. 38502pp. doi:10.1088/1674-1056/23/3/038502
In(n.d.) Chinese Physics B Vol. 23. IOP Publishing

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Li, Cong, Zhuang, Yi-Qi, Zhang, Li, Jin, Gang (2014) Quasi-two-dimensional threshold voltage model for junctionless cylindrical surrounding gate metal-oxide-semiconductor field-effect transistor with dual-material gate. Chinese Physics B, 23. 18501pp. doi:10.1088/1674-1056/23/1/018501
Li, Cong, Zhuang, Yi-Qi, Zhang, Li, Bao, Jun-Lin (2012) Analytical model including the fringing-induced barrier lowering effect for a dual-material surrounding-gate MOSFET with a high-κ gate dielectric. Chinese Physics B, 21. 48501pp. doi:10.1088/1674-1056/21/4/048501
Xin, Yan-hui, Yuan, Sheng, Liu, Ming-tang, Liu, Hong-xia, Yuan, He-cai (2016) Two-dimensional models of threshold voltage and subthreshold current for symmetrical double-material double-gate strained Si MOSFETs. Chinese Physics B, 25. 38502pp. doi:10.1088/1674-1056/25/3/038502
Wang, Ping, Zhuang, Yiqi, Li, Cong, Li, Yao, Jiang, Zhi (2014) Subthreshold behavior models for nanoscale junctionless double-gate MOSFETs with dual-material gate stack. Japanese Journal of Applied Physics, 53 (8) 84201 doi:10.7567/jjap.53.084201
Tripathi, Shweta (2014) A two-dimensional analytical model for channel potential and threshold voltage of short channel dual material gate lightly doped drain MOSFET. Chinese Physics B, 23. 118505pp. doi:10.1088/1674-1056/23/11/118505
Jin, Li, Hong-Xia, Liu, Bin, Li, Lei, Cao, Bo, Yuan (2010) Study on two-dimensional analytical models for symmetrical gate stack dual gate strained silicon MOSFETs. Chinese Physics B, 19. 107302pp. doi:10.1088/1674-1056/19/10/107302
Li, Chong, Xue, Chun-Lai, Li, Ya-Ming, Li, Chuan-Bo, Cheng, Bu-Wen, Wang, Qi-Ming (2015) High performance silicon waveguide germanium photodetector. Chinese Physics B, 24. 38502pp. doi:10.1088/1674-1056/24/3/038502
Liu, Yu-An, Zhuang, Yi-Qi, Ma, Xiao-Hua, Du, Ming, Bao, Jun-Lin, Li, Cong (2014) A unified drain current 1/ f noise model for GaN-based high electron mobility transistors. Chinese Physics B, 23. 20701pp. doi:10.1088/1674-1056/23/2/020701
Liu, Hong-Xia, Li, Jin, Li, Bin, Cao, Lei, Yuan, Bo (2011) Two-dimensional analytical models for asymmetric fully depleted double-gate strained silicon MOSFETs. Chinese Physics B, 20. 17301pp. doi:10.1088/1674-1056/20/1/017301
Zun-Chao, Li (2008) Performance and analytical modelling of halo-doped surrounding gate MOSFETs. Chinese Physics B, 17. 4312-4317 doi:10.1088/1674-1056/17/11/058
Jin, Li, Hong-Xia, Liu, Bin, Li, Lei, Cao, Bo, Yuan (2010) The study on two-dimensional analytical model for gate stack fully depleted strained Si on silicon-germanium-on-insulator MOSFETs. Chinese Physics B, 19. 107301pp. doi:10.1088/1674-1056/19/10/107301
 
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