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Tripathi, Shweta (2014) A two-dimensional analytical model for channel potential and threshold voltage of short channel dual material gate lightly doped drain MOSFET. Chinese Physics B, 23. 118505pp. doi:10.1088/1674-1056/23/11/118505

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Reference TypeJournal (article/letter/editorial)
TitleA two-dimensional analytical model for channel potential and threshold voltage of short channel dual material gate lightly doped drain MOSFET
JournalChinese Physics B
AuthorsTripathi, ShwetaAuthor
Year2014 (November)Volume23
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/23/11/118505Search in ResearchGate
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Mindat Ref. ID6004474Long-form Identifiermindat:1:5:6004474:7
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Full ReferenceTripathi, Shweta (2014) A two-dimensional analytical model for channel potential and threshold voltage of short channel dual material gate lightly doped drain MOSFET. Chinese Physics B, 23. 118505pp. doi:10.1088/1674-1056/23/11/118505
Plain TextTripathi, Shweta (2014) A two-dimensional analytical model for channel potential and threshold voltage of short channel dual material gate lightly doped drain MOSFET. Chinese Physics B, 23. 118505pp. doi:10.1088/1674-1056/23/11/118505
In(n.d.) Chinese Physics B Vol. 23. IOP Publishing

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Tripathi, Shweta (2016) A two-dimensional analytical modeling for channel potential and threshold voltage of short channel triple material symmetrical gate Stack (TMGS) DG-MOSFET. Chinese Physics B, 25. 108503pp. doi:10.1088/1674-1056/25/10/108503
Li, Cong, Zhuang, Yi-Qi, Zhang, Li, Jin, Gang (2014) Quasi-two-dimensional threshold voltage model for junctionless cylindrical surrounding gate metal-oxide-semiconductor field-effect transistor with dual-material gate. Chinese Physics B, 23. 18501pp. doi:10.1088/1674-1056/23/1/018501
Li, Cong, Zhuang, Yi-Qi, Zhang, Li, Jin, Gang (2014) A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding-gate MOSFETs. Chinese Physics B, 23. 38502pp. doi:10.1088/1674-1056/23/3/038502
Ma, Fei, Liu, Hong-Xia, Kuang, Qian-Wei, Fan, Ji-Bin (2012) A threshold voltage analytical model for high- k gate dielectric MOSFETs with fully overlapped lightly doped drain structures. Chinese Physics B, 21. 57304pp. doi:10.1088/1674-1056/21/5/057304
Tripathi, Shweta, Jit, S. (2011) A two-dimensional analytical model for the gate–source and gate–drain capacitances of ion-implanted short-channel GaAs metal-semiconductor-field effect transistor under dark and illuminated conditions. Journal of Applied Physics, 109 (5). 53102pp. doi:10.1063/1.3549257
Qin, Shan-Shan, Zhang, He-Ming, Hu, Hui-Yong, Dai, Xian-Ying, Xuan, Rong-Xi, Shu, Bin (2010) An analytical threshold voltage model for dual-strained channel PMOSFET. Chinese Physics B, 19. 117309pp. doi:10.1088/1674-1056/19/11/117309
Krishna Saramekala, Gopi, Dubey, Sarvesh, Kumar Tiwari, Pramod (2015) A threshold voltage model of short-channel fully-depleted recessed-source/drain (Re-S/D) SOI MOSFETs with high- k dielectric. Chinese Physics B, 24. 108505pp. doi:10.1088/1674-1056/24/10/108505
Zhang, Xian-Jun, Yang, Yin-Tang, Duan, Bao-Xing, Chai, Chang-Chun, Song, Kun, Chen, Bin (2012) Drain-induced barrier lowering effect for short channel dual material gate 4H silicon carbide metal—semiconductor field-effect transistor. Chinese Physics B, 21. 97302pp. doi:10.1088/1674-1056/21/9/097302
Ma, Fei, Liu, Hong-Xia, Fan, Ji-Bin, Wang, Shu-Long (2012) A two-dimensional threshold voltage analytical model for metal-gate/high- k /SiO 2 /Si stacked MOSFETs. Chinese Physics B, 21. 107306pp. doi:10.1088/1674-1056/21/10/107306
Tiwari, Pramod Kumar, Dubey, Sarvesh, Singh, Manjeet, Jit, S. (2010) A two-dimensional analytical model for threshold voltage of short-channel triple-material double-gate metal-oxide-semiconductor field-effect transistors. Journal of Applied Physics, 108 (7). 74508pp. doi:10.1063/1.3488605
Li, Cong, Zhuang, Yi-Qi, Zhang, Li, Bao, Jun-Lin (2012) Analytical model including the fringing-induced barrier lowering effect for a dual-material surrounding-gate MOSFET with a high-κ gate dielectric. Chinese Physics B, 21. 48501pp. doi:10.1088/1674-1056/21/4/048501
 
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