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Wu, Li-Juan, Hu, Sheng-Dong, Luo, Xiao-Rong, Zhang, Bo, Li, Zhao-Ji (2011) Partial-SOI high voltage P-channel LDMOS with interface accumulation holes. Chinese Physics B, 20. 107101pp. doi:10.1088/1674-1056/20/10/107101

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Reference TypeJournal (article/letter/editorial)
TitlePartial-SOI high voltage P-channel LDMOS with interface accumulation holes
JournalChinese Physics B
AuthorsWu, Li-JuanAuthor
Hu, Sheng-DongAuthor
Luo, Xiao-RongAuthor
Zhang, BoAuthor
Li, Zhao-JiAuthor
Year2011 (October)Volume20
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/20/10/107101Search in ResearchGate
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Mindat Ref. ID6000909Long-form Identifiermindat:1:5:6000909:0
GUID0
Full ReferenceWu, Li-Juan, Hu, Sheng-Dong, Luo, Xiao-Rong, Zhang, Bo, Li, Zhao-Ji (2011) Partial-SOI high voltage P-channel LDMOS with interface accumulation holes. Chinese Physics B, 20. 107101pp. doi:10.1088/1674-1056/20/10/107101
Plain TextWu, Li-Juan, Hu, Sheng-Dong, Luo, Xiao-Rong, Zhang, Bo, Li, Zhao-Ji (2011) Partial-SOI high voltage P-channel LDMOS with interface accumulation holes. Chinese Physics B, 20. 107101pp. doi:10.1088/1674-1056/20/10/107101
In(n.d.) Chinese Physics B Vol. 20. IOP Publishing

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