Hu, Xia-Rong, Zhang, Bo, Luo, Xiao-Rong, Wang, Yuan-Gang, Lei, Tian-Fei, Li, Zhao-Ji (2012) A new analytical model for the surface electric field distribution and breakdown voltage of the SOI trench LDMOS. Chinese Physics B, 21. 78502pp. doi:10.1088/1674-1056/21/7/078502
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | A new analytical model for the surface electric field distribution and breakdown voltage of the SOI trench LDMOS | ||
Journal | Chinese Physics B | ||
Authors | Hu, Xia-Rong | Author | |
Zhang, Bo | Author | ||
Luo, Xiao-Rong | Author | ||
Wang, Yuan-Gang | Author | ||
Lei, Tian-Fei | Author | ||
Li, Zhao-Ji | Author | ||
Year | 2012 (July) | Volume | 21 |
Publisher | IOP Publishing | ||
DOI | doi:10.1088/1674-1056/21/7/078502Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 6002732 | Long-form Identifier | mindat:1:5:6002732:4 |
GUID | 0 | ||
Full Reference | Hu, Xia-Rong, Zhang, Bo, Luo, Xiao-Rong, Wang, Yuan-Gang, Lei, Tian-Fei, Li, Zhao-Ji (2012) A new analytical model for the surface electric field distribution and breakdown voltage of the SOI trench LDMOS. Chinese Physics B, 21. 78502pp. doi:10.1088/1674-1056/21/7/078502 | ||
Plain Text | Hu, Xia-Rong, Zhang, Bo, Luo, Xiao-Rong, Wang, Yuan-Gang, Lei, Tian-Fei, Li, Zhao-Ji (2012) A new analytical model for the surface electric field distribution and breakdown voltage of the SOI trench LDMOS. Chinese Physics B, 21. 78502pp. doi:10.1088/1674-1056/21/7/078502 | ||
In | (n.d.) Chinese Physics B Vol. 21. IOP Publishing |
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