Hu, Sheng-Dong, Wu, Li-Juan, Zhou, Jian-Lin, Gan, Ping, Zhang, Bo, Li, Zhao-Ji (2012) Improvement on the breakdown voltage for silicon-on-insulator devices based on epitaxy-separation by implantation oxygen by a partial buried n + -layer. Chinese Physics B, 21. 27101pp. doi:10.1088/1674-1056/21/2/027101
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Improvement on the breakdown voltage for silicon-on-insulator devices based on epitaxy-separation by implantation oxygen by a partial buried n + -layer | ||
| Journal | Chinese Physics B | ||
| Authors | Hu, Sheng-Dong | Author | |
| Wu, Li-Juan | Author | ||
| Zhou, Jian-Lin | Author | ||
| Gan, Ping | Author | ||
| Zhang, Bo | Author | ||
| Li, Zhao-Ji | Author | ||
| Year | 2012 (February) | Volume | 21 |
| Publisher | IOP Publishing | ||
| DOI | doi:10.1088/1674-1056/21/2/027101Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 6002211 | Long-form Identifier | mindat:1:5:6002211:6 |
| GUID | 0 | ||
| Full Reference | Hu, Sheng-Dong, Wu, Li-Juan, Zhou, Jian-Lin, Gan, Ping, Zhang, Bo, Li, Zhao-Ji (2012) Improvement on the breakdown voltage for silicon-on-insulator devices based on epitaxy-separation by implantation oxygen by a partial buried n + -layer. Chinese Physics B, 21. 27101pp. doi:10.1088/1674-1056/21/2/027101 | ||
| Plain Text | Hu, Sheng-Dong, Wu, Li-Juan, Zhou, Jian-Lin, Gan, Ping, Zhang, Bo, Li, Zhao-Ji (2012) Improvement on the breakdown voltage for silicon-on-insulator devices based on epitaxy-separation by implantation oxygen by a partial buried n + -layer. Chinese Physics B, 21. 27101pp. doi:10.1088/1674-1056/21/2/027101 | ||
| In | (n.d.) Chinese Physics B Vol. 21. IOP Publishing | ||
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