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Xu, Gao-Bo, Xu, Qiu-Xia, Yin, Hua-Xiang, Zhou, Hua-Jie, Yang, Tao, Niu, Jie-Bin, Yu, Jia-Han, Li, Jun-Feng, Zhao, Chao (2013) A high performance HfSiON/TaN NMOSFET fabricated using a gate-last process. Chinese Physics B, 22. 117309pp. doi:10.1088/1674-1056/22/11/117309

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Reference TypeJournal (article/letter/editorial)
TitleA high performance HfSiON/TaN NMOSFET fabricated using a gate-last process
JournalChinese Physics B
AuthorsXu, Gao-BoAuthor
Xu, Qiu-XiaAuthor
Yin, Hua-XiangAuthor
Zhou, Hua-JieAuthor
Yang, TaoAuthor
Niu, Jie-BinAuthor
Yu, Jia-HanAuthor
Li, Jun-FengAuthor
Zhao, ChaoAuthor
Year2013 (November)Volume22
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/22/11/117309Search in ResearchGate
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Mindat Ref. ID6003227Long-form Identifiermindat:1:5:6003227:4
GUID0
Full ReferenceXu, Gao-Bo, Xu, Qiu-Xia, Yin, Hua-Xiang, Zhou, Hua-Jie, Yang, Tao, Niu, Jie-Bin, Yu, Jia-Han, Li, Jun-Feng, Zhao, Chao (2013) A high performance HfSiON/TaN NMOSFET fabricated using a gate-last process. Chinese Physics B, 22. 117309pp. doi:10.1088/1674-1056/22/11/117309
Plain TextXu, Gao-Bo, Xu, Qiu-Xia, Yin, Hua-Xiang, Zhou, Hua-Jie, Yang, Tao, Niu, Jie-Bin, Yu, Jia-Han, Li, Jun-Feng, Zhao, Chao (2013) A high performance HfSiON/TaN NMOSFET fabricated using a gate-last process. Chinese Physics B, 22. 117309pp. doi:10.1088/1674-1056/22/11/117309
In(n.d.) Chinese Physics B Vol. 22. IOP Publishing

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