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Deng, Yong-Hui, Xie, Gang, Wang, Tao, Sheng, Kuang (2013) A novel 4H-SiC lateral bipolar junction transistor structure with high voltage and high current gain. Chinese Physics B, 22. 97201pp. doi:10.1088/1674-1056/22/9/097201

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Reference TypeJournal (article/letter/editorial)
TitleA novel 4H-SiC lateral bipolar junction transistor structure with high voltage and high current gain
JournalChinese Physics B
AuthorsDeng, Yong-HuiAuthor
Xie, GangAuthor
Wang, TaoAuthor
Sheng, KuangAuthor
Year2013 (September)Volume22
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/22/9/097201Search in ResearchGate
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Mindat Ref. ID6004145Long-form Identifiermindat:1:5:6004145:8
GUID0
Full ReferenceDeng, Yong-Hui, Xie, Gang, Wang, Tao, Sheng, Kuang (2013) A novel 4H-SiC lateral bipolar junction transistor structure with high voltage and high current gain. Chinese Physics B, 22. 97201pp. doi:10.1088/1674-1056/22/9/097201
Plain TextDeng, Yong-Hui, Xie, Gang, Wang, Tao, Sheng, Kuang (2013) A novel 4H-SiC lateral bipolar junction transistor structure with high voltage and high current gain. Chinese Physics B, 22. 97201pp. doi:10.1088/1674-1056/22/9/097201
In(n.d.) Chinese Physics B Vol. 22. IOP Publishing

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