| Reference Type | Journal (article/letter/editorial) |
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| Title | A novel structure of a high current gain 4H-SiC BJT with a buried layer in the base |
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| Journal | Chinese Physics B |
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| Authors | You-Run, Zhang | Author |
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| Bo, Zhang | Author |
| Zhao-Ji, Li | Author |
| Xiao-Chuan, Deng | Author |
| Xi-Ling, Liu | Author |
| Year | 2009 (September) | Volume | 18 |
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| Publisher | IOP Publishing |
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| DOI | doi:10.1088/1674-1056/18/9/063Search in ResearchGate |
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| Generate Citation Formats |
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| Mindat Ref. ID | 5999568 | Long-form Identifier | mindat:1:5:5999568:5 |
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|
| GUID | 0 |
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| Full Reference | You-Run, Zhang, Bo, Zhang, Zhao-Ji, Li, Xiao-Chuan, Deng, Xi-Ling, Liu (2009) A novel structure of a high current gain 4H-SiC BJT with a buried layer in the base. Chinese Physics B, 18. 3995-3999 doi:10.1088/1674-1056/18/9/063 |
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| Plain Text | You-Run, Zhang, Bo, Zhang, Zhao-Ji, Li, Xiao-Chuan, Deng, Xi-Ling, Liu (2009) A novel structure of a high current gain 4H-SiC BJT with a buried layer in the base. Chinese Physics B, 18. 3995-3999 doi:10.1088/1674-1056/18/9/063 |
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| In | (n.d.) Chinese Physics B Vol. 18. IOP Publishing |
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