Vote for your favorite mineral in #MinCup25! - Pollucite vs. Tugtupite
It's the cesium #pollucite against the optical changeling #tugtupite for this match.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Xiao-Chuan, Deng, Zhen, Feng, Bo, Zhang, Zhao-Ji, Li, Liang, Li, Hong-Shu, Pan (2009) Experimental and numerical analysis of the multi-recessed gate structure for microwave silicon carbide power MESFETs. Chinese Physics B, 18. 3018-3023 doi:10.1088/1674-1056/18/7/067

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleExperimental and numerical analysis of the multi-recessed gate structure for microwave silicon carbide power MESFETs
JournalChinese Physics B
AuthorsXiao-Chuan, DengAuthor
Zhen, FengAuthor
Bo, ZhangAuthor
Zhao-Ji, LiAuthor
Liang, LiAuthor
Hong-Shu, PanAuthor
Year2009 (July)Volume18
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/18/7/067Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5999414Long-form Identifiermindat:1:5:5999414:5
GUID0
Full ReferenceXiao-Chuan, Deng, Zhen, Feng, Bo, Zhang, Zhao-Ji, Li, Liang, Li, Hong-Shu, Pan (2009) Experimental and numerical analysis of the multi-recessed gate structure for microwave silicon carbide power MESFETs. Chinese Physics B, 18. 3018-3023 doi:10.1088/1674-1056/18/7/067
Plain TextXiao-Chuan, Deng, Zhen, Feng, Bo, Zhang, Zhao-Ji, Li, Liang, Li, Hong-Shu, Pan (2009) Experimental and numerical analysis of the multi-recessed gate structure for microwave silicon carbide power MESFETs. Chinese Physics B, 18. 3018-3023 doi:10.1088/1674-1056/18/7/067
In(n.d.) Chinese Physics B Vol. 18. IOP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

You-Run, Zhang, Bo, Zhang, Zhao-Ji, Li, Xiao-Chuan, Deng, Xi-Ling, Liu (2009) A novel structure of a high current gain 4H-SiC BJT with a buried layer in the base. Chinese Physics B, 18. 3995-3999 doi:10.1088/1674-1056/18/9/063
Li-Xia, Zhao, Xiao-Juan, Feng, Ting-Ting, Cao, Xiao, Liang, You-Hua, Luo (2009) Density functional study of Al-doped Au clusters. Chinese Physics B, 18. 2709-2718 doi:10.1088/1674-1056/18/7/014
Sheng-Dong, Hu, Bo, Zhang, Zhao-Ji, Li (2009) A new analytical model of high voltage silicon on insulator (SOI) thin film devices. Chinese Physics B, 18. 315-319 doi:10.1088/1674-1056/18/1/051
Ming, Li, Hai-Ying, Zhang, Chang-Xin, Guo, Jing-Bo, Xu, Xiao-Jun, Fu, Pu-Feng, Chen (2009) Characterization of ZnO nanowire field-effect transistors exposed to ultraviolet radiation. Chinese Physics B, 18. 5020-5023 doi:10.1088/1674-1056/18/11/067
Fu, Qiang, Zhang, Bo, Luo, Xiao-Rong, Li, Zhao-Ji (2013) A dual-gate and dielectric-inserted lateral trench insulated gate bipolar transistor on a silicon-on-insulator substrate. Chinese Physics B, 22. 77309pp. doi:10.1088/1674-1056/22/7/077309
Shi-Qing, Tang, Deng-Yu, Zhang, Li-Jun, Xie, Xiao-Gui, Zhan, Feng, Gao (2009) Realization of Toffoli gate operation using four-level atoms in cavity QED system. Chinese Physics B, 18. 56-61 doi:10.1088/1674-1056/18/1/010
You-Run, Zhang, Bo, Zhang, Ze-Hong, Li, Chang-Jin, Lai, Zhao-Ji, Li (2009) Thermal analytic model of current gain for bipolar junction transistor-bipolar static induction transistor compound device. Chinese Physics B, 18. 763-767 doi:10.1088/1674-1056/18/2/058
You-Run, Zhang, Bo, Zhang, Zhao-Ji, Li, Xiao-Chuan, Deng (2010) Two-dimensional analysis of the interface state effect on current gain for a 4H–SiC bipolar junction transistor. Chinese Physics B, 19. 67102pp. doi:10.1088/1674-1056/19/6/067102
Ji-Jian, Jiang, Chuan-An, Li (2009) Information entropy for static spherically symmetric black holes. Chinese Physics B, 18. 451-456 doi:10.1088/1674-1056/18/2/013
Gui-Feng, Chen, Wen-Bo, Yan, Hong-Jian, Chen, Xing-Hua, Li, Yang-Xian, Li (2009) The effects of fast neutron irradiation on oxygen in Czochralski silicon. Chinese Physics B, 18. 293-297 doi:10.1088/1674-1056/18/1/047
Xiao-Hong, Zhang, Dong, Li (2009) Fuzzy modelling and impulsive control of the hyperchaotic Lü system. Chinese Physics B, 18. 1774-1779 doi:10.1088/1674-1056/18/5/010
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 8, 2025 06:03:49
Go to top of page