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Zhang, You Run, Wang, Wen, Li, Ming Ye, Guo, Fei, Li, Jun Tao, Li, Xuan (2018) A High Current Gain 4H-SiC BJT of Novel Epitaxial Passivation Structure. Materials Science Forum, 924. 625-628 doi:10.4028/www.scientific.net/msf.924.625

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Reference TypeJournal (article/letter/editorial)
TitleA High Current Gain 4H-SiC BJT of Novel Epitaxial Passivation Structure
JournalMaterials Science Forum
AuthorsZhang, You RunAuthor
Wang, WenAuthor
Li, Ming YeAuthor
Guo, FeiAuthor
Li, Jun TaoAuthor
Li, XuanAuthor
Year2018 (June)Volume924
PublisherTrans Tech Publications, Ltd.
DOIdoi:10.4028/www.scientific.net/msf.924.625Search in ResearchGate
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Mindat Ref. ID9890166Long-form Identifiermindat:1:5:9890166:7
GUID0
Full ReferenceZhang, You Run, Wang, Wen, Li, Ming Ye, Guo, Fei, Li, Jun Tao, Li, Xuan (2018) A High Current Gain 4H-SiC BJT of Novel Epitaxial Passivation Structure. Materials Science Forum, 924. 625-628 doi:10.4028/www.scientific.net/msf.924.625
Plain TextZhang, You Run, Wang, Wen, Li, Ming Ye, Guo, Fei, Li, Jun Tao, Li, Xuan (2018) A High Current Gain 4H-SiC BJT of Novel Epitaxial Passivation Structure. Materials Science Forum, 924. 625-628 doi:10.4028/www.scientific.net/msf.924.625
In(2018) Materials Science Forum Vol. 924. Trans Tech Publications, Ltd.

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Bai, Yun, Li, Cheng Zhan, Shen, Hua Jun, Tang, Yi Dan, Liu, Xin Yu (2016) Structural Optimization of 4H-SiC BJT for Ultraviolet Detection with High Optical Gain. Materials Science Forum, 858. 1036-1039 doi:10.4028/www.scientific.net/msf.858.1036
You-Run, Zhang, Bo, Zhang, Zhao-Ji, Li, Xiao-Chuan, Deng, Xi-Ling, Liu (2009) A novel structure of a high current gain 4H-SiC BJT with a buried layer in the base. Chinese Physics B, 18. 3995-3999 doi:10.1088/1674-1056/18/9/063
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Li, Yan Liang, Zhang, Yi Meng, Tang, Xiao Yan, Guo, Tao, Zhang, Yu Ming (2018) Extremely Thermal Stable Ni/W/TaSi2/Pt Simultaneous Ohmic Contacts to n-Type and p-Type 4H-SiC. Materials Science Forum, 924. 401-404 doi:10.4028/www.scientific.net/msf.924.401
Sun, Yong Qiang, Feng, Gan, Kang, Jun Yong, Qian, Wei Ning, Li, Yi Yang, Li, Kai Xi, Zhao, Jian Hui (2018) Growth of 150 mm 4H-SiC Epitaxial Layer by a Hot-Wall Reactor. Materials Science Forum, 924. 76-79 doi:10.4028/www.scientific.net/msf.924.76
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