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Cao, Yan-Rong, He, Wen-Long, Cao, Cheng, Yang, Yi, Zheng, Xue-Feng, Ma, Xiao-Hua, Hao, Yue (2014) Effect of gate length on the parameter degradation relations of PMOSFET under NBTI stress. Chinese Physics B, 23. 117303pp. doi:10.1088/1674-1056/23/11/117303

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Reference TypeJournal (article/letter/editorial)
TitleEffect of gate length on the parameter degradation relations of PMOSFET under NBTI stress
JournalChinese Physics B
AuthorsCao, Yan-RongAuthor
He, Wen-LongAuthor
Cao, ChengAuthor
Yang, YiAuthor
Zheng, Xue-FengAuthor
Ma, Xiao-HuaAuthor
Hao, YueAuthor
Year2014 (November)Volume23
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/23/11/117303Search in ResearchGate
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Mindat Ref. ID6004447Long-form Identifiermindat:1:5:6004447:3
GUID0
Full ReferenceCao, Yan-Rong, He, Wen-Long, Cao, Cheng, Yang, Yi, Zheng, Xue-Feng, Ma, Xiao-Hua, Hao, Yue (2014) Effect of gate length on the parameter degradation relations of PMOSFET under NBTI stress. Chinese Physics B, 23. 117303pp. doi:10.1088/1674-1056/23/11/117303
Plain TextCao, Yan-Rong, He, Wen-Long, Cao, Cheng, Yang, Yi, Zheng, Xue-Feng, Ma, Xiao-Hua, Hao, Yue (2014) Effect of gate length on the parameter degradation relations of PMOSFET under NBTI stress. Chinese Physics B, 23. 117303pp. doi:10.1088/1674-1056/23/11/117303
In(n.d.) Chinese Physics B Vol. 23. IOP Publishing

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