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Lei, Xiao-Yi, Liu, Hong-Xia, Zhang, Yue, Ma, Xiao-Hua, Hao, Yue (2014) Model of hot-carrier induced degradation in ultra-deep sub-micrometer nMOSFET. Chinese Physics B, 23. 57305pp. doi:10.1088/1674-1056/23/5/057305

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Reference TypeJournal (article/letter/editorial)
TitleModel of hot-carrier induced degradation in ultra-deep sub-micrometer nMOSFET
JournalChinese Physics B
AuthorsLei, Xiao-YiAuthor
Liu, Hong-XiaAuthor
Zhang, YueAuthor
Ma, Xiao-HuaAuthor
Hao, YueAuthor
Year2014 (May)Volume23
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/23/5/057305Search in ResearchGate
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Mindat Ref. ID6004995Long-form Identifiermindat:1:5:6004995:5
GUID0
Full ReferenceLei, Xiao-Yi, Liu, Hong-Xia, Zhang, Yue, Ma, Xiao-Hua, Hao, Yue (2014) Model of hot-carrier induced degradation in ultra-deep sub-micrometer nMOSFET. Chinese Physics B, 23. 57305pp. doi:10.1088/1674-1056/23/5/057305
Plain TextLei, Xiao-Yi, Liu, Hong-Xia, Zhang, Yue, Ma, Xiao-Hua, Hao, Yue (2014) Model of hot-carrier induced degradation in ultra-deep sub-micrometer nMOSFET. Chinese Physics B, 23. 57305pp. doi:10.1088/1674-1056/23/5/057305
In(n.d.) Chinese Physics B Vol. 23. IOP Publishing

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