Lei, Xiao-Yi, Liu, Hong-Xia, Gao, Hai-Xia, Yang, Ha-Ni, Wang, Guo-Ming, Long, Shi-Bing, Ma, Xiao-Hua, Liu, Ming (2014) Resistive switching characteristics of Ti/ZrO 2 /Pt RRAM device. Chinese Physics B, 23. 117305pp. doi:10.1088/1674-1056/23/11/117305
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Resistive switching characteristics of Ti/ZrO 2 /Pt RRAM device | ||
Journal | Chinese Physics B | ||
Authors | Lei, Xiao-Yi | Author | |
Liu, Hong-Xia | Author | ||
Gao, Hai-Xia | Author | ||
Yang, Ha-Ni | Author | ||
Wang, Guo-Ming | Author | ||
Long, Shi-Bing | Author | ||
Ma, Xiao-Hua | Author | ||
Liu, Ming | Author | ||
Year | 2014 (November) | Volume | 23 |
Publisher | IOP Publishing | ||
DOI | doi:10.1088/1674-1056/23/11/117305Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 6004449 | Long-form Identifier | mindat:1:5:6004449:1 |
GUID | 0 | ||
Full Reference | Lei, Xiao-Yi, Liu, Hong-Xia, Gao, Hai-Xia, Yang, Ha-Ni, Wang, Guo-Ming, Long, Shi-Bing, Ma, Xiao-Hua, Liu, Ming (2014) Resistive switching characteristics of Ti/ZrO 2 /Pt RRAM device. Chinese Physics B, 23. 117305pp. doi:10.1088/1674-1056/23/11/117305 | ||
Plain Text | Lei, Xiao-Yi, Liu, Hong-Xia, Gao, Hai-Xia, Yang, Ha-Ni, Wang, Guo-Ming, Long, Shi-Bing, Ma, Xiao-Hua, Liu, Ming (2014) Resistive switching characteristics of Ti/ZrO 2 /Pt RRAM device. Chinese Physics B, 23. 117305pp. doi:10.1088/1674-1056/23/11/117305 | ||
In | (n.d.) Chinese Physics B Vol. 23. IOP Publishing |
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