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Zhang, Ting, Yin, Jiang, Zhao, Gao-Feng, Zhang, Wei-Feng, Xia, Yi-Dong, Liu, Zhi-Guo (2014) Bipolar resistance switching in the fully transparent BaSnO 3 -based memory device. Chinese Physics B, 23. 87304pp. doi:10.1088/1674-1056/23/8/087304

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Reference TypeJournal (article/letter/editorial)
TitleBipolar resistance switching in the fully transparent BaSnO 3 -based memory device
JournalChinese Physics B
AuthorsZhang, TingAuthor
Yin, JiangAuthor
Zhao, Gao-FengAuthor
Zhang, Wei-FengAuthor
Xia, Yi-DongAuthor
Liu, Zhi-GuoAuthor
Year2014 (August)Volume23
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/23/8/087304Search in ResearchGate
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Mindat Ref. ID6005300Long-form Identifiermindat:1:5:6005300:0
GUID0
Full ReferenceZhang, Ting, Yin, Jiang, Zhao, Gao-Feng, Zhang, Wei-Feng, Xia, Yi-Dong, Liu, Zhi-Guo (2014) Bipolar resistance switching in the fully transparent BaSnO 3 -based memory device. Chinese Physics B, 23. 87304pp. doi:10.1088/1674-1056/23/8/087304
Plain TextZhang, Ting, Yin, Jiang, Zhao, Gao-Feng, Zhang, Wei-Feng, Xia, Yi-Dong, Liu, Zhi-Guo (2014) Bipolar resistance switching in the fully transparent BaSnO 3 -based memory device. Chinese Physics B, 23. 87304pp. doi:10.1088/1674-1056/23/8/087304
In(n.d.) Chinese Physics B Vol. 23. IOP Publishing

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