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Liang, Bin, Chen, Jian-Jun, Chi, Ya-Qing (2014) Impact of substrate injected hot electrons on hot carrier degradation in a 180-nm NMOSFET. Chinese Physics B, 23. 117304pp. doi:10.1088/1674-1056/23/11/117304

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Reference TypeJournal (article/letter/editorial)
TitleImpact of substrate injected hot electrons on hot carrier degradation in a 180-nm NMOSFET
JournalChinese Physics B
AuthorsLiang, BinAuthor
Chen, Jian-JunAuthor
Chi, Ya-QingAuthor
Year2014 (November)Volume23
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/23/11/117304Search in ResearchGate
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Mindat Ref. ID6004448Long-form Identifiermindat:1:5:6004448:2
GUID0
Full ReferenceLiang, Bin, Chen, Jian-Jun, Chi, Ya-Qing (2014) Impact of substrate injected hot electrons on hot carrier degradation in a 180-nm NMOSFET. Chinese Physics B, 23. 117304pp. doi:10.1088/1674-1056/23/11/117304
Plain TextLiang, Bin, Chen, Jian-Jun, Chi, Ya-Qing (2014) Impact of substrate injected hot electrons on hot carrier degradation in a 180-nm NMOSFET. Chinese Physics B, 23. 117304pp. doi:10.1088/1674-1056/23/11/117304
In(n.d.) Chinese Physics B Vol. 23. IOP Publishing

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