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Han, Lin-Chao, Shen, Hua-Jun, Liu, Ke-An, Wang, Yi-Yu, Tang, Yi-Dan, Bai, Yun, Xu, Heng-Yu, Wu, Yu-Dong, Liu, Xin-Yu (2014) Annealing temperature influence on the degree of inhomogeneity of the Schottky barrier in Ti/4H—SiC contacts. Chinese Physics B, 23. 127302pp. doi:10.1088/1674-1056/23/12/127302

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Reference TypeJournal (article/letter/editorial)
TitleAnnealing temperature influence on the degree of inhomogeneity of the Schottky barrier in Ti/4H—SiC contacts
JournalChinese Physics B
AuthorsHan, Lin-ChaoAuthor
Shen, Hua-JunAuthor
Liu, Ke-AnAuthor
Wang, Yi-YuAuthor
Tang, Yi-DanAuthor
Bai, YunAuthor
Xu, Heng-YuAuthor
Wu, Yu-DongAuthor
Liu, Xin-YuAuthor
Year2014 (December)Volume23
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/23/12/127302Search in ResearchGate
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Mindat Ref. ID6004555Long-form Identifiermindat:1:5:6004555:1
GUID0
Full ReferenceHan, Lin-Chao, Shen, Hua-Jun, Liu, Ke-An, Wang, Yi-Yu, Tang, Yi-Dan, Bai, Yun, Xu, Heng-Yu, Wu, Yu-Dong, Liu, Xin-Yu (2014) Annealing temperature influence on the degree of inhomogeneity of the Schottky barrier in Ti/4H—SiC contacts. Chinese Physics B, 23. 127302pp. doi:10.1088/1674-1056/23/12/127302
Plain TextHan, Lin-Chao, Shen, Hua-Jun, Liu, Ke-An, Wang, Yi-Yu, Tang, Yi-Dan, Bai, Yun, Xu, Heng-Yu, Wu, Yu-Dong, Liu, Xin-Yu (2014) Annealing temperature influence on the degree of inhomogeneity of the Schottky barrier in Ti/4H—SiC contacts. Chinese Physics B, 23. 127302pp. doi:10.1088/1674-1056/23/12/127302
In(n.d.) Chinese Physics B Vol. 23. IOP Publishing


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