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Wang, Hui, Jiang, Ling-Li, Lin, Xin-Peng, Lei, Si-Qi, Yu, Hong-Yu (2018) A simulation study of field plate termination in Ga 2 O 3 Schottky barrier diodes. Chinese Physics B, 27. 127302pp. doi:10.1088/1674-1056/27/12/127302

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Reference TypeJournal (article/letter/editorial)
TitleA simulation study of field plate termination in Ga 2 O 3 Schottky barrier diodes
JournalChinese Physics B
AuthorsWang, HuiAuthor
Jiang, Ling-LiAuthor
Lin, Xin-PengAuthor
Lei, Si-QiAuthor
Yu, Hong-YuAuthor
Year2018 (December)Volume27
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/27/12/127302Search in ResearchGate
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Mindat Ref. ID6009010Long-form Identifiermindat:1:5:6009010:8
GUID0
Full ReferenceWang, Hui, Jiang, Ling-Li, Lin, Xin-Peng, Lei, Si-Qi, Yu, Hong-Yu (2018) A simulation study of field plate termination in Ga 2 O 3 Schottky barrier diodes. Chinese Physics B, 27. 127302pp. doi:10.1088/1674-1056/27/12/127302
Plain TextWang, Hui, Jiang, Ling-Li, Lin, Xin-Peng, Lei, Si-Qi, Yu, Hong-Yu (2018) A simulation study of field plate termination in Ga 2 O 3 Schottky barrier diodes. Chinese Physics B, 27. 127302pp. doi:10.1088/1674-1056/27/12/127302
In(n.d.) Chinese Physics B Vol. 27. IOP Publishing

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