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Xu, Yan-Bing, Yang, Hong-Guan (2017) Capacitance extraction method for a gate-induced quantum dot in silicon nanowire metal–oxide–semiconductor field-effect transistors. Chinese Physics B, 26. 127302pp. doi:10.1088/1674-1056/26/12/127302

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Reference TypeJournal (article/letter/editorial)
TitleCapacitance extraction method for a gate-induced quantum dot in silicon nanowire metal–oxide–semiconductor field-effect transistors
JournalChinese Physics B
AuthorsXu, Yan-BingAuthor
Yang, Hong-GuanAuthor
Year2017 (December)Volume26
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/26/12/127302Search in ResearchGate
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Mindat Ref. ID6008013Long-form Identifiermindat:1:5:6008013:8
GUID0
Full ReferenceXu, Yan-Bing, Yang, Hong-Guan (2017) Capacitance extraction method for a gate-induced quantum dot in silicon nanowire metal–oxide–semiconductor field-effect transistors. Chinese Physics B, 26. 127302pp. doi:10.1088/1674-1056/26/12/127302
Plain TextXu, Yan-Bing, Yang, Hong-Guan (2017) Capacitance extraction method for a gate-induced quantum dot in silicon nanowire metal–oxide–semiconductor field-effect transistors. Chinese Physics B, 26. 127302pp. doi:10.1088/1674-1056/26/12/127302
In(n.d.) Chinese Physics B Vol. 26. IOP Publishing

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Ai-Bin, Hu, Qiu-Xia, Xu (2010) Comparative studies of Ge and Si p-channel metal–oxide–semiconductor field-effect-transistors with HfSiON dielectric and TaN metal gate. Chinese Physics B, 19. 57302pp. doi:10.1088/1674-1056/19/5/057302
Chen, Hai-Feng (2014) Gate-modulated generation—recombination current in n-type metal—oxide—semiconductor field-effect transistor. Chinese Physics B, 23. 128502pp. doi:10.1088/1674-1056/23/12/128502
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