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Li, Chang-Sheng, Ma, Lei, Guo, Jie-Rong (2017) Application of real space Kerker method in simulating gate-all-around nanowire transistors with realistic discrete dopants *. Chinese Physics B, 26. 97301pp. doi:10.1088/1674-1056/26/9/097301

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Reference TypeJournal (article/letter/editorial)
TitleApplication of real space Kerker method in simulating gate-all-around nanowire transistors with realistic discrete dopants *
JournalChinese Physics B
AuthorsLi, Chang-ShengAuthor
Ma, LeiAuthor
Guo, Jie-RongAuthor
Year2017 (August)Volume26
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/26/9/097301Search in ResearchGate
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Mindat Ref. ID6008661Long-form Identifiermindat:1:5:6008661:9
GUID0
Full ReferenceLi, Chang-Sheng, Ma, Lei, Guo, Jie-Rong (2017) Application of real space Kerker method in simulating gate-all-around nanowire transistors with realistic discrete dopants *. Chinese Physics B, 26. 97301pp. doi:10.1088/1674-1056/26/9/097301
Plain TextLi, Chang-Sheng, Ma, Lei, Guo, Jie-Rong (2017) Application of real space Kerker method in simulating gate-all-around nanowire transistors with realistic discrete dopants *. Chinese Physics B, 26. 97301pp. doi:10.1088/1674-1056/26/9/097301
In(n.d.) Chinese Physics B Vol. 26. IOP Publishing

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