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Chen, Hai-Feng (2014) Gate-modulated generation—recombination current in n-type metal—oxide—semiconductor field-effect transistor. Chinese Physics B, 23. 128502pp. doi:10.1088/1674-1056/23/12/128502

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Reference TypeJournal (article/letter/editorial)
TitleGate-modulated generation—recombination current in n-type metal—oxide—semiconductor field-effect transistor
JournalChinese Physics B
AuthorsChen, Hai-FengAuthor
Year2014 (December)Volume23
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/23/12/128502Search in ResearchGate
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Mindat Ref. ID6004578Long-form Identifiermindat:1:5:6004578:2
GUID0
Full ReferenceChen, Hai-Feng (2014) Gate-modulated generation—recombination current in n-type metal—oxide—semiconductor field-effect transistor. Chinese Physics B, 23. 128502pp. doi:10.1088/1674-1056/23/12/128502
Plain TextChen, Hai-Feng (2014) Gate-modulated generation—recombination current in n-type metal—oxide—semiconductor field-effect transistor. Chinese Physics B, 23. 128502pp. doi:10.1088/1674-1056/23/12/128502
In(n.d.) Chinese Physics B Vol. 23. IOP Publishing

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Chen, Hai-Feng, Guo, Li-Xin, Zheng, Pu-Yang, Dong, Zhao, Zhang, Qian (2015) Characteristics of drain-modulated generation current in n-type metal-oxide-semiconductor field-effect transistor. Chinese Physics B, 24. 78502pp. doi:10.1088/1674-1056/24/7/078502
Li, Cong, Zhuang, Yi-Qi, Zhang, Li, Jin, Gang (2014) Quasi-two-dimensional threshold voltage model for junctionless cylindrical surrounding gate metal-oxide-semiconductor field-effect transistor with dual-material gate. Chinese Physics B, 23. 18501pp. doi:10.1088/1674-1056/23/1/018501
Chen, Hai-Feng, Guo, Li-Xin, Du, Hui-Min (2012) Degradation of the transconductance of a gate-modulated generation current in nMOSFET. Chinese Physics B, 21. 88501pp. doi:10.1088/1674-1056/21/8/088501
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Zhao, Lian-Feng, Tan, Zhen, Wang, Jing, Xu, Jun (2015) GaSb p-channel metal-oxide-semiconductor field-effect transistor and its temperature dependent characteristics. Chinese Physics B, 24. 18501pp. doi:10.1088/1674-1056/24/1/018501
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Li, Qi, Zhang, Zhao-Yang, Li, Hai-Ou, Sun, Tang-You, Chen, Yong-He, Zuo, Yuan (2019) Stacked lateral double-diffused metal-oxide-semiconductor field effect transistor with enhanced depletion effect by surface substrate. Chinese Physics B, 28. 37201pp. doi:10.1088/1674-1056/28/3/037201
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