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Ma, Xiao-Hua, Lü, Min, Pang, Lei, Jiang, Yuan-Qi, Yang, Jing-Zhi, Chen, Wei-Wei, Liu, Xin-Yu (2014) Kink effect in current—voltage characteristics of a GaN-based high electron mobility transistor with an AlGaN back barrier. Chinese Physics B, 23. 27302pp. doi:10.1088/1674-1056/23/2/027302

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Reference TypeJournal (article/letter/editorial)
TitleKink effect in current—voltage characteristics of a GaN-based high electron mobility transistor with an AlGaN back barrier
JournalChinese Physics B
AuthorsMa, Xiao-HuaAuthor
Lü, MinAuthor
Pang, LeiAuthor
Jiang, Yuan-QiAuthor
Yang, Jing-ZhiAuthor
Chen, Wei-WeiAuthor
Liu, Xin-YuAuthor
Year2014 (February)Volume23
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/23/2/027302Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6004658Long-form Identifiermindat:1:5:6004658:7
GUID0
Full ReferenceMa, Xiao-Hua, Lü, Min, Pang, Lei, Jiang, Yuan-Qi, Yang, Jing-Zhi, Chen, Wei-Wei, Liu, Xin-Yu (2014) Kink effect in current—voltage characteristics of a GaN-based high electron mobility transistor with an AlGaN back barrier. Chinese Physics B, 23. 27302pp. doi:10.1088/1674-1056/23/2/027302
Plain TextMa, Xiao-Hua, Lü, Min, Pang, Lei, Jiang, Yuan-Qi, Yang, Jing-Zhi, Chen, Wei-Wei, Liu, Xin-Yu (2014) Kink effect in current—voltage characteristics of a GaN-based high electron mobility transistor with an AlGaN back barrier. Chinese Physics B, 23. 27302pp. doi:10.1088/1674-1056/23/2/027302
In(n.d.) Chinese Physics B Vol. 23. IOP Publishing

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