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Luo, Jun, Zhao, Sheng-Lei, Mi, Min-Han, Chen, Wei-Wei, Hou, Bin, Zhang, Jin-Cheng, Ma, Xiao-Hua, Hao, Yue (2016) Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor. Chinese Physics B, 25. 27303pp. doi:10.1088/1674-1056/25/2/027303

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Reference TypeJournal (article/letter/editorial)
TitleEffect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor
JournalChinese Physics B
AuthorsLuo, JunAuthor
Zhao, Sheng-LeiAuthor
Mi, Min-HanAuthor
Chen, Wei-WeiAuthor
Hou, BinAuthor
Zhang, Jin-ChengAuthor
Ma, Xiao-HuaAuthor
Hao, YueAuthor
Year2016 (February)Volume25
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/25/2/027303Search in ResearchGate
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Mindat Ref. ID6007086Long-form Identifiermindat:1:5:6007086:7
GUID0
Full ReferenceLuo, Jun, Zhao, Sheng-Lei, Mi, Min-Han, Chen, Wei-Wei, Hou, Bin, Zhang, Jin-Cheng, Ma, Xiao-Hua, Hao, Yue (2016) Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor. Chinese Physics B, 25. 27303pp. doi:10.1088/1674-1056/25/2/027303
Plain TextLuo, Jun, Zhao, Sheng-Lei, Mi, Min-Han, Chen, Wei-Wei, Hou, Bin, Zhang, Jin-Cheng, Ma, Xiao-Hua, Hao, Yue (2016) Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor. Chinese Physics B, 25. 27303pp. doi:10.1088/1674-1056/25/2/027303
In(n.d.) Chinese Physics B Vol. 25. IOP Publishing

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