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Mi, Min-Han, Zhang, Kai, Zhao, Sheng-Lei, Wang, Chong, Zhang, Jin-Cheng, Ma, Xiao-Hua, Hao, Yue (2015) Improved performance of AlGaN/GaN HEMT by N 2 O plasma pre-treatment. Chinese Physics B, 24. 27303pp. doi:10.1088/1674-1056/24/2/027303

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Reference TypeJournal (article/letter/editorial)
TitleImproved performance of AlGaN/GaN HEMT by N 2 O plasma pre-treatment
JournalChinese Physics B
AuthorsMi, Min-HanAuthor
Zhang, KaiAuthor
Zhao, Sheng-LeiAuthor
Wang, ChongAuthor
Zhang, Jin-ChengAuthor
Ma, Xiao-HuaAuthor
Hao, YueAuthor
Year2015 (February)Volume24
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/24/2/027303Search in ResearchGate
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Mindat Ref. ID6005918Long-form Identifiermindat:1:5:6005918:3
GUID0
Full ReferenceMi, Min-Han, Zhang, Kai, Zhao, Sheng-Lei, Wang, Chong, Zhang, Jin-Cheng, Ma, Xiao-Hua, Hao, Yue (2015) Improved performance of AlGaN/GaN HEMT by N 2 O plasma pre-treatment. Chinese Physics B, 24. 27303pp. doi:10.1088/1674-1056/24/2/027303
Plain TextMi, Min-Han, Zhang, Kai, Zhao, Sheng-Lei, Wang, Chong, Zhang, Jin-Cheng, Ma, Xiao-Hua, Hao, Yue (2015) Improved performance of AlGaN/GaN HEMT by N 2 O plasma pre-treatment. Chinese Physics B, 24. 27303pp. doi:10.1088/1674-1056/24/2/027303
In(n.d.) Chinese Physics B Vol. 24. IOP Publishing

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