Reference Type | Journal (article/letter/editorial) |
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Title | A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT |
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Journal | Chinese Physics B |
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Authors | Zheng, Jia-Xin | Author |
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Ma, Xiao-Hua | Author |
Lu, Yang | Author |
Zhao, Bo-Chao | Author |
Zhang, Hong-He | Author |
Zhang, Meng | Author |
Cao, Meng-Yi | Author |
Hao, Yue | Author |
Year | 2015 (October) | Volume | 24 |
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Publisher | IOP Publishing |
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DOI | doi:10.1088/1674-1056/24/10/107305Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 6005623 | Long-form Identifier | mindat:1:5:6005623:8 |
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|
GUID | 0 |
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Full Reference | Zheng, Jia-Xin, Ma, Xiao-Hua, Lu, Yang, Zhao, Bo-Chao, Zhang, Hong-He, Zhang, Meng, Cao, Meng-Yi, Hao, Yue (2015) A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT. Chinese Physics B, 24. 107305pp. doi:10.1088/1674-1056/24/10/107305 |
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Plain Text | Zheng, Jia-Xin, Ma, Xiao-Hua, Lu, Yang, Zhao, Bo-Chao, Zhang, Hong-He, Zhang, Meng, Cao, Meng-Yi, Hao, Yue (2015) A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT. Chinese Physics B, 24. 107305pp. doi:10.1088/1674-1056/24/10/107305 |
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In | (n.d.) Chinese Physics B Vol. 24. IOP Publishing |
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