Su, Shuai, Jian, Xiao-Chuan, Wang, Fang, Han, Ye-Mei, Tian, Yu-Xian, Wang, Xiao-Yang, Zhang, Hong-Zhi, Zhang, Kai-Liang (2016) Resistive switching characteristic and uniformity of low-power HfO x -based resistive random access memory with the BN insertion layer. Chinese Physics B, 25. 107302pp. doi:10.1088/1674-1056/25/10/107302
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Resistive switching characteristic and uniformity of low-power HfO x -based resistive random access memory with the BN insertion layer | ||
| Journal | Chinese Physics B | ||
| Authors | Su, Shuai | Author | |
| Jian, Xiao-Chuan | Author | ||
| Wang, Fang | Author | ||
| Han, Ye-Mei | Author | ||
| Tian, Yu-Xian | Author | ||
| Wang, Xiao-Yang | Author | ||
| Zhang, Hong-Zhi | Author | ||
| Zhang, Kai-Liang | Author | ||
| Year | 2016 (October) | Volume | 25 |
| Publisher | IOP Publishing | ||
| DOI | doi:10.1088/1674-1056/25/10/107302Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 6006789 | Long-form Identifier | mindat:1:5:6006789:0 |
| GUID | 0 | ||
| Full Reference | Su, Shuai, Jian, Xiao-Chuan, Wang, Fang, Han, Ye-Mei, Tian, Yu-Xian, Wang, Xiao-Yang, Zhang, Hong-Zhi, Zhang, Kai-Liang (2016) Resistive switching characteristic and uniformity of low-power HfO x -based resistive random access memory with the BN insertion layer. Chinese Physics B, 25. 107302pp. doi:10.1088/1674-1056/25/10/107302 | ||
| Plain Text | Su, Shuai, Jian, Xiao-Chuan, Wang, Fang, Han, Ye-Mei, Tian, Yu-Xian, Wang, Xiao-Yang, Zhang, Hong-Zhi, Zhang, Kai-Liang (2016) Resistive switching characteristic and uniformity of low-power HfO x -based resistive random access memory with the BN insertion layer. Chinese Physics B, 25. 107302pp. doi:10.1088/1674-1056/25/10/107302 | ||
| In | (n.d.) Chinese Physics B Vol. 25. IOP Publishing | ||
See Also
These are possibly similar items as determined by title/reference text matching only.
