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Wu, Shi-Jian, Wang, Fang, Zhang, Zhi-Chao, Li, Yi, Han, Ye-Mei, Yang, Zheng-Chun, Zhao, Jin-Shi, Zhang, Kai-Liang (2018) High uniformity and forming-free ZnO-based transparent RRAM with HfO x inserting layer. Chinese Physics B, 27. 87701pp. doi:10.1088/1674-1056/27/8/087701

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Reference TypeJournal (article/letter/editorial)
TitleHigh uniformity and forming-free ZnO-based transparent RRAM with HfO x inserting layer
JournalChinese Physics B
AuthorsWu, Shi-JianAuthor
Wang, FangAuthor
Zhang, Zhi-ChaoAuthor
Li, YiAuthor
Han, Ye-MeiAuthor
Yang, Zheng-ChunAuthor
Zhao, Jin-ShiAuthor
Zhang, Kai-LiangAuthor
Year2018 (August)Volume27
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/27/8/087701Search in ResearchGate
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Mindat Ref. ID6009618Long-form Identifiermindat:1:5:6009618:4
GUID0
Full ReferenceWu, Shi-Jian, Wang, Fang, Zhang, Zhi-Chao, Li, Yi, Han, Ye-Mei, Yang, Zheng-Chun, Zhao, Jin-Shi, Zhang, Kai-Liang (2018) High uniformity and forming-free ZnO-based transparent RRAM with HfO x inserting layer. Chinese Physics B, 27. 87701pp. doi:10.1088/1674-1056/27/8/087701
Plain TextWu, Shi-Jian, Wang, Fang, Zhang, Zhi-Chao, Li, Yi, Han, Ye-Mei, Yang, Zheng-Chun, Zhao, Jin-Shi, Zhang, Kai-Liang (2018) High uniformity and forming-free ZnO-based transparent RRAM with HfO x inserting layer. Chinese Physics B, 27. 87701pp. doi:10.1088/1674-1056/27/8/087701
In(n.d.) Chinese Physics B Vol. 27. IOP Publishing

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