| Reference Type | Journal (article/letter/editorial) |
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| Title | Self-aligned-gate AlGaN/GaN heterostructure field-effect transistor with titanium nitride gate |
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| Journal | Chinese Physics B |
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| Authors | Zhang, Jia-Qi | Author |
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| Wang, Lei | Author |
| Li, Liu-An | Author |
| Wang, Qing-Peng | Author |
| Jiang, Ying | Author |
| Zhu, Hui-Chao | Author |
| Ao, Jin-Ping | Author |
| Year | 2016 (August) | Volume | 25 |
|---|
| Publisher | IOP Publishing |
|---|
| DOI | doi:10.1088/1674-1056/25/8/087308Search in ResearchGate |
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| Generate Citation Formats |
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| Mindat Ref. ID | 6007585 | Long-form Identifier | mindat:1:5:6007585:3 |
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|
| GUID | 0 |
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| Full Reference | Zhang, Jia-Qi, Wang, Lei, Li, Liu-An, Wang, Qing-Peng, Jiang, Ying, Zhu, Hui-Chao, Ao, Jin-Ping (2016) Self-aligned-gate AlGaN/GaN heterostructure field-effect transistor with titanium nitride gate. Chinese Physics B, 25. 87308pp. doi:10.1088/1674-1056/25/8/087308 |
|---|
| Plain Text | Zhang, Jia-Qi, Wang, Lei, Li, Liu-An, Wang, Qing-Peng, Jiang, Ying, Zhu, Hui-Chao, Ao, Jin-Ping (2016) Self-aligned-gate AlGaN/GaN heterostructure field-effect transistor with titanium nitride gate. Chinese Physics B, 25. 87308pp. doi:10.1088/1674-1056/25/8/087308 |
|---|
| In | (n.d.) Chinese Physics B Vol. 25. IOP Publishing |
|---|
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